Title of Invention

ULTRA LOW K (ULK) SICOH FILM AND METHOD OF FORMING THE SAME

Abstract The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, 0 and H, has.a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, 0 and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater.
Full Text

Documents:

2733-CHENP-2005 ABSTRACT.pdf

2733-CHENP-2005 CLAIMS.pdf

2733-CHENP-2005 CORRESPONDENCE OTHERS.pdf

2733-CHENP-2005 CORRESPONDENCE PO.pdf

2733-CHENP-2005 DESCRIPTION (COMPLETE).pdf

2733-CHENP-2005 DRAWINGS.pdf

2733-CHENP-2005 FORM-1.pdf

2733-CHENP-2005 FORM-18.pdf

2733-CHENP-2005 FORM-3.pdf

2733-CHENP-2005 FORM-5.pdf

2733-CHENP-2005 PCT.pdf

2733-CHENP-2005 PETITIONS.pdf

2733-CHENP-2005 POWER OF ATTORNEY.pdf


Patent Number 232684
Indian Patent Application Number 2733/CHENP/2005
PG Journal Number 13/2009
Publication Date 27-Mar-2009
Grant Date 20-Mar-2009
Date of Filing 21-Oct-2005
Name of Patentee INTERNATIONAL BUSINESS MACHINES CORPORATION
Applicant Address Armonk, New York 10504,
Inventors:
# Inventor's Name Inventor's Address
1 GATES, Stephen Mcconnell, 22 Inningwood Road, Ossining, NY 10562,
2 GRILL, Alfred 85 Overlook Road, White Plains, NY 10605,
PCT International Classification Number C23C 16/32
PCT International Application Number PCT/US2004/008195
PCT International Filing date 2004-03-17
PCT Conventions:
# PCT Application Number Date of Convention Priority Country
1 10/390,801 2003-03-18 U.S.A.