Title of Invention |
ULTRA LOW K (ULK) SICOH FILM AND METHOD OF FORMING THE SAME |
Abstract |
The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, 0 and H, has.a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, 0 and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. |
Documents:
2733-CHENP-2005 ABSTRACT.pdf
2733-CHENP-2005 CLAIMS.pdf
2733-CHENP-2005 CORRESPONDENCE OTHERS.pdf
2733-CHENP-2005 CORRESPONDENCE PO.pdf
2733-CHENP-2005 DESCRIPTION (COMPLETE).pdf
2733-CHENP-2005 DRAWINGS.pdf
2733-CHENP-2005 FORM-1.pdf
2733-CHENP-2005 FORM-18.pdf
2733-CHENP-2005 FORM-3.pdf
2733-CHENP-2005 FORM-5.pdf
2733-CHENP-2005 PCT.pdf
2733-CHENP-2005 PETITIONS.pdf
2733-CHENP-2005 POWER OF ATTORNEY.pdf