Title of Invention

"A METHOD OF DEPOSITING THIN FILMS OF METALS AND NON METALS"

Abstract

"A device for depositing thin films of metals and non metals and diamond like carbon on a substrate". A device for depositing thin films of metals and non metals and diamond like carbon on a substrate comprising a plasma chamber with an anode made of cooper and filed with graphite and a plurality of cathodes; said anode having a support at the upper end for supporting said graphite; a high voltage source for charging a capacitor assembly; a spark gap for allowing the discharge from said capacitor assembly to the electrode assembly; a substrate holder disposed above and in a spaced relationship to said anode and adapted to be moved away or towards said anode, the substrate held to the lower end of said holder; a shutter disposed between said anode and substrate in an inoperative position.

Full Text

FIELD OF INVENTION Thin invention relates to a device for depositino thin films of metals and non metals. such as diamond like carbon. Thouah reference is made hereinafter to diamond like carbon. it. is to be understood that a particular and advantaaeous. application is with respect to diamond like carbon film, thouoh the invention it? not intended to be restricted thereto. In Darticular. t.bis invention relates to a dense plasma focus device for denositino thin films of diamond like carban,. BACKGROUND QF INVENTION It is known that diamond like carbon films are met agitable amporphous materials, which mav include s>. micro crvstalline phase?. Such a material has several distinct. advant.ar.iHS in that it possesses extreme hardness .in the rariae of 10(30—3000 kg/mn2 with a oenerallv low friction coefficient, between 0.01 to W.28. Further, diamond like carbon films have high optical trancparency and hihh electrical restivitv. PRIOR ART It is known to deoosit thin films of diamond like carbon by the method of chemical vapour cleposition. In one such known method emplovino hot wire chemical vapour deposition, the disadvantage is. that of hiah substrate temperatures siuch as lO6K. and low deposition rates. Such a process has limited applications. Vest another method known in the art consists in an electron asaiwteri chemical. vapour deposition. Such a method is also attended with the dieadvantaoe of a hiah substrate temperature of lO6K.during deposition, and further it is difficult to control the cirowth rate. Yet: another disadvantage is the low quality of films, and consequentially it had limited applications. A plasma assisted chemical vapour deposition method is also known in the art. and which could either he microwave or remote plasim.3 assisted chemical vapour deposition. In the microwave chemical vapour deposition. the substrate is normalIv Si and which requires to be scratched bv SiC. A disadvantaae is that of hiah siuhstrate temper at'tires in the vicinity of 900°C and low deposition rates. yet another disadvarttaqi? its that its rough surface tapoaraphy limits its optical and electronic application .In the remote plasma assisted chemical vapour deposition, the substrates are normally S1. and Ni. The disadvantaoes are of high substrate temperature. low deposition rate and rough surface topooraphy „ A physical vapour deposition method is known in the art and employing ign beam sputtering with a. current density of source of IMA/Cm2 at 1000 & V, A disadvantage of such a method is that of low deposition rates and also requires extremely low pressures. which adds to the costs. It is also known in the art to employ a dual ion aputtering beam and wherein the substrate can be Si and variety of metals. A disadvantage of such a method is that the deposition rate depends on pressure. OBJECTS OF THE PRESENT INVENTION An cbiect of this present invention is to propose a novel device for depoaitina thin films of metals and nan metals such as diamond like carbon films. Another ob iect o-f this invention is to propose a device for depositing thin films of metals and non metal a such as diamond like carbon films which obviate the disadvantage of the prior art, ret another object of this invention is to propose a devicefor depositing thin filmsof metals and non metals such aw diamond like carbon films which has high deposition rates. Still another obiect of this invention is to propose a device for depositiog thin films of metal a and non metele such as diamond like carbon films which has smooth surface topoaraohy. A further abject of this invention is to propose a device for depositino thin films of metals; and non metals such as diamond like carbon films which has the required optical transparency. A still further obiect of this invention is to propose a device for depositina thin films of metals and non metal is such as diamond like carbon films which have required structural, ontical incluclina 1R and Uv range, mechanical and electronic properties. Yet a further object of this invention it to propose a device for depositing thin films of metals and non metals such as diamond like carbon films which has a high electrical restivity. Another object of this invention is to propose a device for depositing thin films of metals and non metals such as diamond like carbon films on different substrates. DESCRIPTION OF INVENTION According to this invention there is provided a device for depositing thin films of metals and non metals and diamond like carbon on a substrate comprising: i) a plasma chamber with an anode made of copper and filled with graphite and a plurality of cathodes; ii) said anode having a support at the upper end for supporting said graphite; iii) a high voltage source for charging a capacitor assembly; iv) a spark gap for allowing the discharge from said capacitor assembly to the electrode assembly; v) a substrate holder disposed above and in a spaced relationship to said anode and adapted to be moved away or towards said anode, the substrate held to the lower end of said holder; vii) a shutter disposed between said anode and substrate in an inoperative position. DESCRIPTION OF INVENTION WITH REFERENCE TO ACCOMPANYING DRAWINGS Further objects and advantages of this invention will be more apparent from the ensuing description when read in conjunction with the accompanying drawings and wherein: Fig. 1 shows the device of the present invention: Referring to fig. 1. the device 1 of the present invention comprises a focus chamber 2 made of mild steel or stainless steel and has an insulator sleeve 3 which assists in the formation of the plasma. A high voltage charger 4 is connected to a capacitor C1. Which charges capacitor 4 is connected to a capacitor C1. A spark gas SG allows a discharge from capacitor C1 to an electrode assembly consisting of a centrally disposed anode made up of copper and field with graghite 5 and a set of symmetrically disposed cathodes 7. Thus, when capacitor C1 discharges a blasma sheet is formed between anode S and backwall plate 8 and connected to cathodes 7, The hesiaht of insulator sleeve 3 determines the shape of plasma sheet. Due to the magnetic field there is a force which moves the plasma sheet away from anode 5 and when it. reaches cathodes 7, the radial component of current density and azimuthal maanetic. field aives an axial force so that the plasma sheet moves at a high speed upwards. and when i.t. reaches the top of anode 5,, there is an axial component of current density and &zi muthal magnetic field. but as current is in the opposite direction, it. results in e collapsing of plasma radielly inward. With such a compression, a hi ah temperature and density plasme acts on the graphite 12 supported at the top of anode 5 and allows the release of ions in a con i eel ehower towards the? substrate 10. and with the shutter in a withdrawn position. In accordance with this invention. a heater is provided at the holding end of a brass holder 11 for holding substrate .1.0, The device has a vacuum pump 13 with a pressure aanae 14,, Further, a aass inlet 15 is provided with device 1 for introduction of a a eta. such as wraon. In operation,, device 1 is first evacuated hv vac.uu.ii) pump 13. Araon aas is then introduced throuoh gas inlet 15. Holder 11. can be moved along the vertical axis so as to allow the distance of substrate 10 to be varied from anode 5. Dependina on the qualitv and thicknesB of film. substrate 10 is disposed at a distance of 1 to 10 cm from anode 5. CLAIM; 1. A device for depositing thin films of metals and non metals and diamond like carbon on a substrate comprising: i) a plasma chamber with an anode made of copper and filled with graphite and a plurality of cathodes; ii) said anode having a support at the upper end for supporting said graphite; iii) a high voltage source for charging a capacitor assembly; iv) a spark gap for allowing the discharge from said capacitor assembly to the electrode assembly; v) a substrate holder disposed above and in a spaced relationship to said anode and adapted to be moved away or towards said anode, the substrate held to the lower end of said holder; vi) a shutter disposed between said anode and substrate in an inoperative position. 2. The device as claimed in claim 1 wherein a heater is provided with said substrate for causing a heating of the substrate. 3. The device as claimed in claim 1 wherein said chamber is connected to a vacuum pump and a pressure gauge. 4. The device as claimed in claim 1 wherein a gas inlet is provided with said chamber. 5. The device as claimed in claim 1 comprising an insulator sleeve extending from the base and within said chamber, said anode disposed in a spaced relationship within said sleeve. 6. The device for forming thin films of metals, non metals and diamond like carbon on a substrate substantially as herein described and illustrated.

Documents:

3362-del-1998-abstract.pdf

3362-del-1998-claims.pdf

3362-DEL-1998-Correspondence Others-(30-08-2011).pdf

3362-del-1998-correspondence-others.pdf

3362-del-1998-correspondence-po.pdf

3362-del-1998-description (complete).pdf

3362-del-1998-drawings.pdf

3362-del-1998-form-1.pdf

3362-del-1998-form-19.pdf

3362-del-1998-form-2.pdf

3362-del-1998-form-3.pdf

3362-del-1998-gpa.pdf

3362-del-1998-petition-others.pdf