| Title of Invention | "A COMPOSITION USEFUL FOR CLEANING OR ETCHING A SUBSTRATE" |
|---|---|
| Abstract | A composition useful for cleaning or etching a substrate, comprising: a salt containing fluoride and a phosphonium cation or a sulfonium cation or a quaternary ammonium cation comprising at least one alkanol or alkoxy group or two or more quaternary ammonium groups linked together by one or more carbon-containing groups, wherein the salt preferably makes up between 1% and 10% by weight of the composition; 0.1 -5% by weight of an acid; an organic solvent and/or water in an amount from 0 to 99.8 % by weight of the composition; and a pH of between 2 and 9, preferably between 2 and 4. |
| Full Text | WE CLAIM: 1. A composition useful for cleaning or etching a substrate, comprising: 0.1 to 20% by weight of tetrabutyl phosphonium fluoride; 0.1 to 5% by weight of an acid; an organic solvent or water or a mixture thereof in an amount from 1 to 99.8% of the composition by weight; and a pH of between 2 and 9. 2. The composition as claimed in claim 1, wherein the salt makes up between 1% and 10% by weight of the composition. 3. The composition as claimed in claim 1, wherein the organic solvent is an alcohol. 4. The composition as claimed in claim 1, wherein the organic solvent is a glyme. 5. The composition as claimed in claim 1, wherein the water makes up less than 5% of the composition by weight. 6. The composition as claimed in claim 1, wherein the pH is between 2 and 4. 7. The composition as claimed in claim 1, optionally comprising less than 5% by weight of second salt comprising one or more of a quaternary ammonium salt, a sulfonium salt, and a phosphonium salt. 8. The composition as claimed in claim 1, wherein the composition has a free metal ion content of less than 10PPB. 9. The composition as claimed in claim 1, wherein the composition is capable of etching a DARO layer at a rate greater than it etches a doped oxide layer. 10. The composition as claimed in claim 1, wherein the composition is capable of etching an undoped oxide layer at a rate greater than it etches a doped oxide layer. 11. The composition as claimed in claim 1, wherein the composition is capable of non-selectively etching a doped oxide layer and an undoped oxide layer. 12. The composition as claimed in claim 1, wherein the solvent is a glyme, the water is present in an amount less than 3%, and the pH is between 2.5 and 4. 13. The composition as claimed in claim 1, wherein the composition optionally comprises tetrabutyl phosphonium benzoate. |
|---|
2370-DELNP-2006-Abstract-(25-02-2011).pdf
2370-DELNP-2006-Claims-(17-05-2012).pdf
2370-DELNP-2006-Claims-(25-02-2011).pdf
2370-DELNP-2006-Correspondence Others-(17-05-2012).pdf
2370-DELNP-2006-Correspondence-Others-(25-02-2011).pdf
2370-delnp-2006-correspondence-others-1.pdf
2370-delnp-2006-correspondence-others.pdf
2370-delnp-2006-description(complete).pdf
2370-DELNP-2006-Drawings-(25-02-2011).pdf
2370-DELNP-2006-Form-1-(25-02-2011).pdf
2370-DELNP-2006-Form-3-(25-02-2011).pdf
2370-DELNP-2006-GPA-(25-02-2011).pdf
2370-DELNP-2006-Petition 137-(25-02-2011).pdf
| Patent Number | 253326 | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Indian Patent Application Number | 2370/DELNP/2006 | ||||||||||||
| PG Journal Number | 29/2012 | ||||||||||||
| Publication Date | 20-Jul-2012 | ||||||||||||
| Grant Date | 12-Jul-2012 | ||||||||||||
| Date of Filing | 28-Apr-2006 | ||||||||||||
| Name of Patentee | SACHEM INC. | ||||||||||||
| Applicant Address | 821 E.WOODWARD, AUSTIN, TEXAS 78704,UNITED STATES OF AMERICA. | ||||||||||||
Inventors:
|
|||||||||||||
| PCT International Classification Number | H01L | ||||||||||||
| PCT International Application Number | PCT/US2004/035544 | ||||||||||||
| PCT International Filing date | 2004-10-27 | ||||||||||||
PCT Conventions:
|
|||||||||||||