Indian Patents. 271461:SILYLETHYNYLATED HETEROACENES AND ELECTRONIC DEVICES MADE THEREWITH

Title of Invention	SILYLETHYNYLATED HETEROACENES AND ELECTRONIC DEVICES MADE THEREWITH
Abstract	Novel silylethynylated heteroacenes and formulations and electronic devices made with those compounds are disclosed.

Full Text	Silyiethynylated Heteroacenes And Electronic Devices Made Therewith Technical Field The present invention relates generally to the field of organic semiconductors and, more particularly, to silyiethynylated heteroacenes as well as to formulations and electronic devices made with these compounds. Background of the Invention Display technology is expected to become a dominant sector of high-tech industry in the future. It is also expected that the fiat panel display technology will be revolutionized by the use of organic semiconductors that will allow manufacture of cheap, flexible, lightweight, fully portable flat panel displays with no apparent limits to their size. It is predicted that due to the lower manufacturing cost, organic semiconductor based displays will eventually gain dominance over amorphous silicon based counterparts and the respective market share will grow to $1.6 billion by 2007. To realize these goals, however, significant breakthroughs will have to take place in the area of organic semiconductor material and device processing. Interest in organic thin film transistors (OTFTs) for possible use in displays, sensors and other large area electronic applications has been increasing rapidiy. Best reported organic thin film transistor (OTFT) device performance rivals or exceeds that of hydrogenated amorphous silicon devices, and low OTFT process temperatures allow fabrication on a range of surfaces including cloth, paper or lower temperature polymeric substrates. Organic semiconductors for use in OTFTs can be broadly divided into two groups as high and low mobility materials. High mobility materials have mobility > 0.1 cm2/V-s, usefully large carrier energy bandwidth (> 0.1 eV) and weak or sometimes absent temperature activation of mobility. To date, most high mobility organic semiconductors have been small molecule materials (with pentacene the most notable example) and most have been deposited by vacuum sublimation or from a solution precursor with a high- temperature (> 150° C) conversion step. Low mobility materials have mobility from about 10-5 - 10-1 cm2/V-s, typically transport carriers by hopping, and have strong temperature activation of mobility. Most polymeric organic semiconductors fall into this group and many have the potential advantage that they can be deposited from solution. To date, there have been few reports of low-temperature solution processed organic semiconductors with high mobility. In addition, even for low mobility materials, current solution deposition techniques have not demonstrated material structure, thickness and property control comparable to vacuum deposition techniques. It was an aim of the present invention to provide new organic semiconductor compounds with advantageous properties, especially with relatively low OTFT process temperatures and relatively high mobility. Another aim of the present invention was to extend the pool of organic semiconductor compounds available to the person skilled in the art. Other aims of the present invention are immediately evident to the person skilled in the art from the following detailed description. It was found that these aims can be achieved by providing novel silylethynylated heteroacenes as claimed in the present invention. M. Payne, S. Odom, R. Parkin, J. Anthony, Org. Lett. 2004, Vol. 6, No. 19, p.3325-3328, discloses silylethynylated heteroacenes, but does not disclose compounds according to the present invention. Summary of the Invention The present invention relates to compounds of formula I wherein one of Y1 and Y2 denotes -CH= or =CH- and the other denotes -X-, one of Y3 and Y4 denotes -CH= or =CH- and the other denotes -X-, X is-O-, -S-,-Se-or-NR"'-, R is cyclic, straight-chain or branched alkyl or alkoxy having 1 to 20, preferably 1 to 8 C-atoms, or aryl having 2-30 C-atoms, all of which are optionally fluorinated or perfluorinated, with SiR3 preferably being trialkylsilyl, R' is H, F, CI, Br, I, CN, straight-chain or branched alkyl or alkoxy having 1 to 20, preferably 1 to 8 C-atoms and optionally being fluorinated or perfluorinated, optionally fluorinated or perfluorinated aryl having 6 to 30 C-atoms, preferably C6F5, or CO2R", with R" being H, optionally fluorinated alkyl having 1 to 20 C-atoms, or optionally fluorinated aryl having 2 to 30, preferably 5 to 20 C- atoms, R"' is H or cyclic, straight-chain or branched alkyl with 1 to 10 C- atoms, preferably H, m is 0 or 1, n is 0 or 1. The invention further relates to a formulation comprising one or more compounds of formula I, and preferably further comprising one or more organic solvents. The invention further relates to electronic devices, in particular transistors, organic field effect transistors (OFETs), organic thin film transistors (OTFTs), organic photovoltaic (OPV) devices, integrated circuits (ICs), sensors, radio frequency identification (RFID) tags and solar cells, comprising one or more compounds of formula I or formulations comprising them. Brief Description of the Drawings The accompanying drawing incorporated in and forming a part of the specification, illustrates several aspects of the present invention and together with the description serves to explain certain principles of the invention. In the drawing: Figure 1a and 1b are schematical illustrations of two possible embodiments for the field-effect transistor of the present invention; and Figure 2a and 2b are schematical representations illustrating two possible embodiments of the photovoltaic apparatus of the present invention. Reference will now be made in detail to the present preferred embodiments of the invention as illustrated in the accompanying drawing figures. Detailed Description of the Invention The novel compounds of the present invention may be broadly described as silylethynylated heteroacenes (anthra(diheterocycles), tetra(diheterocycles) and penta(diheterocycles) compounds). Preferred compounds of formula I are those wherein Y1 = Y3 and Y2 = Y4, and those wherein Y1 = Y4 and Y2 = Y3. Preferred compounds of formula I are selected from the following formulae: wherein R, R' and X are as defined above. In accordance with yet another aspect of the present invention a formulation comprising one or more of the novel compounds of formula I, A1, A2, B1, B2, C1 or C2 and one or more solvents is provided. The solvents are preferably organic solvents, very preferably selected from alkylated and/or fluorinated or chlorinated benzenes like toluene, xylene and the like, anisole or its alkylated and/or fluorinated derivatives, tetralin, indane, decalin, N,N-dimethylaniline, N-methylpyrrolidone, N,N- dimethylformamide or pyridine. In accordance with yet another aspect of the present invention a transistor is provided. The transistor preferably comprises a gate electrode, a semiconductor constructed from the novel compounds or formulations of the present invention, an insulator between the gate electrode and the semiconductor, a source electrode and a drain electrode. in accordance with yet another aspect of the present invention, a photovoltaic device is provided. The photovoltaic device preferably comprises a transparent anode, a semiconductor constructed from the novel compounds or formulations of the present invention, an n-type material and a cathode. Suitable methods and materials for preparing electronic devices like transistors and photovoltaic devices and their components, like for example the gate, source or drain electrode, cathode, anode or n-type material (electron transporter), are known to the person skilled in the art and are described in the literature, for example in WO 02/45184 A1, WO 03/052841 A1, WO 2004/013922 A2 and the references cited therein. Very preferred are compounds of formulae I, A1, A2, B1, B2, C1 and C2 wherein - X is -O-,-Se-or-NH-, - X is -S-, - R' is not H, - R' is F, CI, Br or COOH, very preferably F, CI or Br, most preferably F, - R is straight-chain or branched alkyi having 1 to 8 C atoms, preferably methyl, ethyl, propyl which is n-propyl or isopropyl, or butyl which is n- butyl, sec-butyl, isobutyl or tert-butyl, - R"' - is H, - m=n=0, - if X is S, then R' is not H, - if m=n=0 and X is S, then R' is selected from optionally fluorinated or perfluorinated aryl having 6 to 30 C-atoms, preferably C6F5, F, CI, Br, I, CN and CO2R", very preferably from F, CI and Br. The silylethynylated heteroacenes are usually prepared as a mixture of isomers. Formula I thus covers isomer pairs wherein in the first isomer Y1 = Y3 and Y2 = Y4, and in the second isomer Y1 = Y4 and Y2 = Y3. Formulae A1 and A2 represent the two isomers of anthra (diheterocycles). Formulae B1 and B2 represent the two isomers of tetra (diheterocycles). Formulae C1 and C2 represent the two isomers of penta (diheterocycles). The novel compounds of the present invention include both the mixture of the isomers of formulae A1, A2; B1, B2; or C1, C2 and the pure isomers A1, A2, B1, B2, C1 or C2. The isomers A1, A2, B1, B2, C1 or C2 may be purified from the mixture of isomers of formulae A1, A2; B1, B2; or C1, C2 by methods known to those skilled in the art including but not limited to high-performance liquid chromatography (HPLC). The novel compounds of the present invention can be prepared by a relatively simple and straightforward method. Specifically, the silylethynylated heteroacenes are easily made by the addition of an alkynyllithium to the corresponding acenequinone, followed by reductive workup with either HI or tin (II) chloride: This type of reaction is well-described in: Miller, G. P.; Mack, J.; Briggs, J. Org. Lett. 2000, 2, 3983, Anthony, J, E,; Eaton, D. L; Parkin, S. R. Org. Lett, 2002, 4, 15, Anthony, J. E.; Brooks, J. S.; Eaton, D. L.; Parkin, S. J. Am. Chem, Soc. 2001, 123, 9482, Payne, M M.; Odom, S. A.; Parkin, S. R.; Anthony, J..E. Org. Lett. 2004 6, 3325. The acenequinone is very easily prepared by a 4-fold aldol condensation between a dialdehyde and commercially-available 1,4-cyclohexanedione: This condensation is well-described in; De ia Cruz, P.; Martin, N.; Miguel, F.; Seoane, C; Albert, A.; Cano, H.; Gonzalez, A.; Pingarron, J. M. J. Org. Chem. 1992, 57, 6192. The "R" group of these dialdehydes is typically installed by the following sequence: This procedure is described for thiophene dialdehyde in detail in: Laquindanura, J. G.; Katz, H. E.; Lovinger, A. J. J. Am. Chem. Soc. 1998, 120, 664. Compounds of the present invention wherein R' is halogen, e.g. F or Br, can be prepared according to or in analogy to reaction schemes 1 and 2: Scheme 1 Thus the "base unit" for all of these materials is the heterocyclic dialdehyde. Many of these heterocyclic dialdehydes are known in the literature, and some are even commercially available: Thiophene 2,3-dialdehyde is commercially available from Aldrich and Acros chemical. Furan 2,3-dialdehyde is prepared as described in Zaluski, M. C; Robba, M.; Bonhomme, M. Bull. Chim. Soc. Fr. 1970, 4,1445. Selenophene 2,3-dialdehyde is prepared as described in Paulmier, C; Morel, J.; Pastour, P.; Scmard, D. Bull. Chim. Soc. Fr. 1969, 7, 2511. Other heterocyclic dialdehydes can be prepared by the same methods outlined for the synthesis of the furan and selenophene compounds. The following synthesis and examples are prepared to further illustrate the invention, but it is not to be considered as limited thereto. A number of useful electronic devices may be constructed from the novel compounds of the present invention. A typical field effect transistor (FET) according to the present invention (10) is illustrated in Figure 1a. The FET (10) is comprised of.a gate electrode (12) of a type known in the art, an insulator or gate dielectric (14) also of a type known in the art and a semiconductor (16) in the form of a thin layer or film of the compounds of the present invention. In addition, the FET (10) includes a conductive source electrode (18) and a drain electrode (20) both operatively connected to the semiconductor (16). The insulator (14) may, for example, be a dielectric or metal oxide or even an insulating polymer like polymethylmethacrylate). The conducting source and drain electrodes (18), (20) may be metals known in the art to be useful as electrodes, heavily doped semiconductors such as silicon or even a conducting polymer. The FET illustrated in Figure 1a is known as a bottom-gate, top-contact configuration. An alternative embodiment of the FET (10) of the present invention is illustrated in Figure 1b. This configuration is known as a bottom-gate, bottom-contact configuration. Another alternative embodiment of the FET (10) of the present invention is illustrated in Figure 1c. This configuration is known as a top-gate configuration, and is comprised of a substrate (22) of a type known in the art, a conductive source electrode (18) and a drain electrode (20), both operatively connected to a semiconductor (16) in the form of a thin layer or film of the compounds of the present invention, an insulator or gate dielectric (14) of a type known in the art, and a gate electrode (12) also of a type known in the art. The gate electrode (12), source electrode (18) and drain electrode (20) may again be any sort of conductor gold, silver, aluminum, platinum, heavily-doped silicon or an organic conducting polymer. The insulator or gate dielectric (14) can be an oxide such as aluminum oxide or silicone oxide or an insulating polymer such as polymethylmethacrylate). In either configuration the compound of the present invention may be applied either by solution or vapor methods to form the semiconductor (16). Optionally the semiconductor (16) comprises one or more organic binders, preferably polymeric binders, as described for example in WO 2005/055248 A1, to adjust the rheological properties, preferably in a proportion of binder to semiconductor from 20:1 to 1:20, preferably 10:1 to 1:10, more preferably 5:1 to 1:5 by weight. The binder polymers may also be semiconducting. A typical photovoltaic apparatus according to the present invention (22) is illustrated in Figure 2a. The photovoltaic apparatus (22) comprises a transparent conductive electrode or anode (24), a semiconductor (26) in the form of a thin layer or film of the compound of the present invention and a bottom electrode or cathode (28). In the photovoltaic apparatus embodiment illustrated in Figure 2a, a layer (30) of n-type material is provided between the semiconductor (26) and the cathode (28). In the photovoltaic apparatus (22) illustrated in Figure 2b the semiconductor (26) comprises the compound of the present invention blended with an n-type material. In the case of organic solar cells, the compounds of the present invention are typically used as the hole transporter (the "p-type" material). This material must be used in conjunction (i.e. as a blend) with an n-type material, defined as any electron-accepting compound. Suitable and preferred examples for n-type or acceptor materials are fullerenes like C60, or solubilized derivatives thereof, or perylene diimides like PTCBI (3,4,9,10-perylenetetracarboxylic bisbenzimidazole). The photovoltaic apparatus (22) can typically be constructed in the two ways illustrated in Figures 2a and 2b. As illustrated in Figure 2a, the p- type compound and the n-type compound are both deposited from vapor or solution in sequential steps, leading to a single heterojunction interface. Alternatively, as illustrated in Figure 2b, the p-type material and the n-type material may be mixed and deposited from solution on the anode prior to deposition of the cathode material. In this embodiment the p-type and n- type materials phase segregate, leading to multiple heterojunctions in the bulk. In both cases the anode material typically has a high work function and is transparent (ITO or (10) oxide on glass or plastic). In contrast, the cathode (28) is a low work function conductor, and is typically reflective to improve efficiency (aluminum, silver or an indium-gallium eutectic). In either case the anode layer can be pre-coated with a commercial conducting polymer like PEDOT (poly(3,4-ethylenedioxythiophene)) or a blend of PEDOT:PSS (poly(styrenesulfonate)) in order to improve charge injection efficiency. The following examples are intended to explain the invention without restricting it. The methods, structures and properties described hereinafter can also be applied or transferred to materials that are claimed in this invention but not explicitly described in the foregoing specification or in the examples. Unless stated otherwise, above and below percentages are per cent by weight and temperatures are given in degrees Celsius. Example 1 5,11-Bis(triethylsllylethynyl)anthra[2,3-b:6,7-b']dithiophene and 5,11-Bis(triethylsilytethynyl)anthra[2,3-b:7,6-b']dithiophene. To an oven-dried 250-mL round-bottom flask equipped with a stir bar and cooled under N2 was added hexanes (20 ml) and 0.38 mL of triethyisilyl acetylene (2.0 mmol), followed by the dropwise addition of 0.73 ml of n-BuLi (1.8 mmol, 2.46 M solution in hexanes). This mixture was stirred for 1 h, then hexanes (60 ml) and anthradithiophenequinone (prepared by method described in De la Cruz, P. et al. J. Org. Chem. 1992, 57,6192.) (0.16 g, 0.34 mmol) were added. The mixture was heated at 60° C overnight, then quenched with 0.5 mL of water. SnCl2 2H2O (0.50 g, 2.2 mmol) in 10 % aq. HCI (1 ml) was added and the mixture was stirred for 2 h at 60° C. The solution was dried over MgSO4, then loaded onto a thick pad of silica. The silica was rinsed with hexanes (500 ml), then the product was eluted using hexanes: DCM (5:1). Removal of solvent yielded 0.18 g (0.31 mmol, 91 %) of a reddish powder. Recrystallization from hexanes yielded thick dark-red plates. Recrystallized 3x from hexanes. Yield: 91 %. MP: 151° C. 1H-NMR (400 MHz, CDCI3) d = 9.18 (s,2H), 9.13 (s, 2H), 7.57 (d, J= 5.6 Hz, 2H, syn isomer), 7.57 (d, J = 5.2 Hz, 2H, anti isomer), 7.47 (d, J= 5.6 Hz, 2H), 1.27 (tt.J = 8.0 Hz, 1.6 Hz, 18H), 0.94 (q, J = 8.0 Hz, 1.2H). 13C-NMR (400 MHz, CDCI3) d = 140.27, 140.18, 1.39.82, 139.68, 133.70, 130.11 (2C), 130.01 (2C), 129.92 (2C), 129.81, 129.17, 123.95, 121.50,121.44, 120.20, 118.05, 117.69,8.04 (2C), 7.82, 4.93 (2C), 4.50. Anal, calcd % C: 72.02, % H: 6.75. Found % C: 71.68, %H: 6.75. For preparation of systems with alternative "R" groups, a different acetylene would be substituted for triethylsilyl acetylene in the above preparation. For preparation of systems where "R'" is different from "H" the requisite precursor quinones can be prepared as described in Laquindanum, J. G. et al., J. Am. Chem. Soc, 1998,120, 664. Example 2 Tetra[2,3-b:8,9-b']dithiophene-5,13-dione and Tetra[2,3 -b:9,8- b']dithiophene-5,13-dione. A 1:2 mixture of 2,3-thiophenedicarboxaldehyde (0.85 g, 6.07 mmol) and benzo[1,2-b]thiophene-4,5-dicarboxaldehyde (1.66 g, 8.70 mmol) was dissolved in THF (200 ml) in a 500-ml round-bottom flask with a stir bar, then 1,4-cyclohexanedione (0.83 g, 7.40 mmol) was added and the solution was stirred until uniform. After the addition of 15 % KOH (2 ml), precipitate began to form immediately, and vigorous stirring was continued overnight. The solution was filtered to yield 3.87 g of a light brown powder made up of insoluble quinones which were used directly in the next step: MS (70 eV, El) m/z 370 (100 %, M+). 5,13-Bis(tris(trimethylsilyl)silylethynyl)tetra[2,3-b:8,9-b']dithiophene and 5,13-Bis(tris(trimethylsilyl)sl/ylethynyl)tetra[2,3-b:9,8- b+]dithiophene. To an oven-dried 500-mL round-bottom flask cooled under N2 and equipped with a stir bar was added hexanes (150 ml) and tris((trimethylsily1)silyl acetylene (14 g, 51.1 mmol). n-BuLi (19.5 ml, 47,9 mmol, 2.6 M in hexanes) was added dropwise and the mixture was stirred for 2 hr. The above quinone mixture (3.87 g) was added and stirring was continued overnight, followed by the addition of anhydrous THF (20 ml) and additional stirring for 2 d. Water (2 ml) and a solution of SnCI2- H2O (10.0 g, 44 mmol) in 10 % HCI (20 ml) was added and the solution was stirred for 2 hr. DCM (100 ml) was then added and the organic layer was separated, dried over MgSO4, and rinsed through a thin pad of silica (DCM). Solvent was concentrated to a volume of 10 ml, then diluted with hexanes (200 ml), and rinsed onto a thick pad of silica. The silica was rinsed with hexanes (600 ml), then hexanes: DCM (1:1) to elute the product mixture, and solvent was removed from this second fraction. Using column chromatography (hexanesrethyl acetate (9:1)), 0.82 g of the desired tetradithiophene were isolated. The tetradithiophene was recrystallized from acetone to yield dark-blue needles. 1H-NMR (400 MHz, CDCI3) d = 9.53 (s, 1H), 9.45 (s, 1H), 9.16 (s, 1H), 9.13 (s, 1H), 8.53 (s, 1H), 8.49 (s, 1H), 7.54 (d, J = 5.6 Hz, 1H), 7.50 (d, J= 6.2 Hz, 1H), 7.41 (s, 1H), 7.40 (s, 1H), 1.08 (s, 54H). 13C-NMR (400 MHz, CDCI3) d = 140.49, 140.46, 140.20, 140.19, 139.92,139.86,138.98,138.90,130.27, 129.74, 129.61,126.84,125.35,124.02,123.72,122.34,122.29,121.64,121.04, 120.99, 120.29, 107.05, 106.72,105.64, 104.85, 104.76, 11.5. UV-VIS (DCM): ?abs (e): 244 (18700), 300 (32400), 328 (61800), 372 (6940), 392 (5610), 465 (2110), 528 (766), 555 (1340), 599 (2810). 653 (4960). IR (KBr) vm8X (cm-1): 2956 (m), 2945 (m), 2860 (s), 2129 (m), 1460 (m), 1400 (m), 1366 (s), 1061 (m), 997 (w), 882 (s),752 (s), 720 (vs), 661 (s), 586 (m). Example 3 Penta[2,3-b:9,10-b']dithiophene-6,14-dione and Penta[2,3 -b:10,9- b]dithiophene-6,14-dione. In a 500-mL round-bottom flask equipped with a stir bar, benzo[1,2- b]thiophene-4,5-dicarboxaldehyde (2.35 g, 12.4 mmol) was dissolved in THF (200 ml). 1,4-Cyclohexanedione (0.70 g, 6.2 mmol) was added and stirred until the solution was uniform, then 15 % KOH (2 ml) was added. Vigorous stirring was continued overnight, then the solution was filtered and rinsed with ether (20 ml) and DCM (20 ml). The brown solid was heated to reflux in DMF (400 ml) for 2 hr, then cooled and filtered to yield 1.6 g (3.8 mmol) of the desired quinone as a light brown insoluble powder. MS (70 eV, El) m/z 420 (42 %, M+). 6,14- Bis(tri(t-butyl)silylethynyl)-penta[2,3-b:9,10-b']dithiophene and 6,14-Bis(tri(t-butyl)silylethynyl)-penta[2,3:10,9-b']dithiophene(6b). To an oven-dried 250-ml round-bottom flask equipped with a stir bar and cooled under N2 was added anhydrous THF (40 mL) and tri(t-butyl)silyl acetylene (3.59 g, 16,0 mmol). n-BuLi (5.7 ml, 14 mmol, 2.6 M in hexanes) was added dropwise and the solution was stirred for 1 hr, then the abovementioned quinone (1.6 g, 3,8 mmol) was added. After stirring for 24 hr, additional anhydrous THF (40 ml) was added and stirring was continued for 3 days. Water (2 ml) and a solution of SnCI2 • H2O (1.0 g, 4.4 mmol) in 10 % HCI (2 ml) was added and the solution was stirred for 2 hr. DCM (200 ml) was added and the organic layer was separated, dried over MgSO4, and rinsed through a thin pad of silica (DCM). Solvent was concentrated to a volume of 10 ml then diluted with hexanes (200 ml). This solution was poured onto a thick pad of silica and rinsed with hexanes (500 ml), then hexanes:DCM (1:1) to elute the product. Removal of solvent yielded 0.44 g (0.53 mmol, 14 %) of product as a sparingly-soluble green powder. Recrystallization from toluene, then from CS2 yielded 6b as slender dark green needles. 1H-NMR (400 MHz, CDCI3) d - 9.49 (s, 2H), 9.41 (s, 2H), 8.41 (s, 2H), 8.38 (s, 2H), 7.46 (d, J - 5.6 Hz, 2H), 7.36 (s, J = 5.6 Hz, 2H), 1.50 (s, 54H). 13C-NMR (400 MHz, CS2/C6D6) d = 140.52, 138.91, 130,98, 130.86,130.67, 130.55, 129.57, 128.92,128.88, 128.78, 128.75, 128.26, 127.96, 127.94, 127.59, 126.11, 124.08, 122.94, 121.61, 109.10, 106.70,97.94,31.12, 30.81,28.89,22.73. UV-VIS (DCM): ?abs, (e): 277 (42500), 342 (69500), 373 (6350), 398 (2770),416 (2740),441 (2220), 475 (1730), 577 (145), 623 (474), 690 (1170),762 (2600). IR (KBr) vmax (cm-1): (cmol): 3400 (w), 2972 (m), 2935 (m), 2859 (5). 2133 (5), 1648 (w), 1385 (s), 1115 (m), 1032 (w), 890 (s), 820 (s), 748 (s), 619 (s). Anal calcd for C54H66S2Si2 • H2O % C: 75.99, % H: 8.03. Found % C: 75.61, %H: 7.93. MS (70 eV, El) m/z 834 (100 %, M+), 777 (63 %, M+ -C4H9). MP: 268 ° C (dec). Example 4 2,8-Dibromo-5,11-bis(triethytsilylethynyl)anthra[2,3-b:6,7-b'] dithiophene and 2,8-dibromo-5,11-bis(triethylsilylethynyl)anthra[2,3- b:7,6-b']ithiophene Step 1: 5-bromo-thiophene-2,3-dicarbaldehyde. 2,3-Bis(1,3-dioxolan-2-yl)thiophene (13.51 g, 59.2 mmol) was dissolved in THF (200 ml), followed by the addition of N-bromosuccinimide (11.0 g, 61.2 mmol). This mixture was stirred in the absence of light overnight (~15 h), then water ( 300 ml) was added and the product was extracted with ether (3 x 200 ml). The organic phases were combined and washed with sat. aq. NaHCO3 solution and brine, then dried over Na2SO4. The solvent was removed under reduced pressure. The residue was dissolved in THF (150 ml) then 2N HCI solution (40 ml) was added. This mixture was heated at reflux for 1 h. After cooling to room temperature, the reaction mixture was poured into water (300 ml) and extracted with ether (3 x 200 ml). The extracts were combined and washed with sat. aq. NaHCO3, water and brine, then dried over Na2SO4. The solvent was removed under reduced pressure. The residue was purified by column chromatography, eluting with petrol/ethyl acetate (10:0 to 7:3), to give a brown solid (1.43 g, 11%). 1H NMR (300MHz, CDCl3): d(ppm) 10.38 (s, 1H, CHO), 10.26 (s, 1H, CHO), 7.60 (s, 1H, Ar-H); 13C NMR (75 MHz, CDCl3): d(ppm) 183.3, 181.4, 148.4, 143.6, 132.4, 123.9; MS (m/e): 220 (M+), 218 (M+), 191,189, 161,163,111,82,57,39. Step 2: 2,8-dibromoanthra[2,3-b:6,7-b']dithiophene-5,11-dione and 2,8-dibromoanthra[2,3-b:7,6-b']dithiophene-5,11-dione. 5-Bromo-thiophene-2,3-dicarboxaldehyde (0.91 g, 4.2 mmol) was dissolved in EtOH (150 ml), followed by the addition of 1,4-cyclohexane dione (0.24 g, 2.1 mmol). Upon addition of a 15 % KOH solution (5 ml) with strong stirring, a precipitate began to form immediately. The mixture was stirred for an additional hour. The precipitate was collected and washed with water and ethanol, then dried under vacuum to give yellow solid of low solubility (0.85 g, 86%). IR (cm-1): 1668 (C=O), 1574, 1488, 1317, 1253. Step 3: 2,8-dibromo-5,11-bis(triethylsilylethynyl)anthra[2,3-b:6,7-b'] dithiophene and 2,8-dibromo-5,11-bis(triethylsilylethynyl)anthra[2,3- b:7,6-b']dithiophene. To a solution of triethylsilylacetylene (1.20 g, 8.55 mmol) in dioxane (70 ml) was added BuLi (1.6 M in hexanes, 5.3 ml, 8.48 mmol) dropwise at RT. This solution was stirred for 30 min, followed by the addition of 2,8- dibromoanthra[2,3-b:6,7-b]dithiophene-5,11-dione (0.80 g, 1.67 mmol). The resultant mixture was heated at reflux for 3 h. After cooling, solid SnCI2 (5 g), then cone. HCI solution (10 ml) was added, and the mixture stirred for 30 min. The precipitate was collected by filtration and washed with water and acetone to give a deep purple solid, which was recystalfized with acetone/THF, to give purple crystals (0.59 g, 49%). 1H NMR (300MHz, CDCI3): d(ppm) 8.93 (m, 4H, Ar-H), 7.45 (s, 1H, Ar-H). 7.46 (s, 1H, Ar-H), 1.23 (m, 18H, CH3), 0.91 (m, 12H, CH2); 13C NMR (75 MHz, CDCI3): d(ppm) 140.7, 140.6, 139.8,139.7, 130.0, 129.9,129.6,129.5, 126.4, 120.3, 120.2, 119.64, 119.59, 119.12, 119.06, 117.7, 107.3, 102.9, 7.85, 4.70; IR: 2126 cm-1 (C=C). Example 5 2,8-Difluoro-5,11-bis(triethylsilylethynyl)anthra[2,3-b:6,7-b'] dithiophene and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthra[2,3- b:7,6-b']dithiophene The synthesis was carried out as described in example 4, but using the corresponding fluoro compounds instead of the bromo compounds. 1H NMR (300MHz, CDCI3): d(ppm) 8.91 (s, 2H), 8.84 (s, 2H), 6.81 (d, 2H), 1.22 (m, 18H), 0.90 (m, 12H); 13C NMR (75 MHz, CDCI3): d(ppm) 167.83, 163.86, 136.66, 136.61, 136.57, 133.89,130.14, 129.94, 129.58, 129.40, 120.80 (CH), 120.68 (CH), 120.59 (CH), 120.46 (CH), 120.36 (CH), 102.75 (CH), 102.60 (CH), 7.82 (CH3), 4.67 (CH2); IR: 2133 cm-1 (C=C). MS (m/e): 602 (M+). The compounds of the present invention demonstrate remarkable physical and electronic properties. The silyl acetylene unit substituted on the inner aromatic ring serves two important purposes. First it lends solubility to the molecule, allowing processing by simple, solution-based methods. Secondly and perhaps more importantly, this functional group causes the molecules to self-assemble into it-stacked arrays that are critical to improved device performance. More specifically, this molecular arrangement leads to improved conductivity, reduced band gap and field effect transistors (FETs) devices with a hole mobility of 0.001 to more than 1.0 cm2/Vs. Example 6 A field effect transistor as shown in Figure 1a was provided. The substrate for the field-effect transistor consisted of a heavily-doped SI wafer with thermally grown oxide layer (370 ran), serving as gate electrode and dielectric. Gold source and drain contacts were evaporated to yield devices with channel length of 22 urn and channel width of 340 urn. The gold electrodes were then treated with pentafluorobenzenethiol to improve the electrode interface. A 1 - 2 wt% solution of the triethylsilyt anthradithiophene derivative of Example 1 in toluene was spread across the device surface using a plastic blade, and the solvent allowed to evaporate. The devices were then heated in air at 90° C for two minutes to drive off residual solvent. The triethylsilyl anthradithiophene derivative of Example 1 formed a uniform film of excellent quality yielding hole mobility of 1.0 cm2A/s with excellent on/off current ratio (107). The performance of this material is likely due to the close p-stacked interactions in the crystal. The triethylsilyl anthradithiophene derivative adopts a 2-D p-stacking arrangement with a 7t-face separation of approximately 3.25 Å. The triethylsilyl anthradithiophene derivative was also characterized by a p-overlap of 1.57 Å2 and a lateral slip of 2.75, 1.76 Å. All measurements were performed in air at room temperature and the mobility was calculated from the saturation currents. Example 7 A field effect transistor as shown in Figure 1c was provided as follows: On a glass substrate patterned Au source and drain electrodes were provided by shadow masking. A self assembling monolayer of pentafluorobenzene- thiol (electrode injection layer) was spincoated onto the Au electrodes and washed with IPA. A semiconductor formulation was prepared by dissolving the difluoro triethylsilyl anthradithiophene derivative of Example 5 in a concentration of 2 wt.% in 4-methyl anisole. The semiconductor solution was then spincoated onto the substrate at 500 rpm for 18 seconds followed by 2000rpm for 60s at room temperature in air and the solvent was evaporated. The insulator material (Cytop® 809M, available from Asahi Glass) was mixed 3 parts to 2 parts of perfluorosolvent (FC75, Acros catalogue number 12380) and then spincoated onto the semiconductor giving a thickness of approximately 1 urn and the solvent was evaporated. A gold gate contact was defined over the device channel area by evaporation through a shadow mask For the electrical measurements the transistor sample was mounted in a sample holder. Microprobe connections were made to the gate, drain and source electrodes using Karl Suss PH100 miniature probe-heads. These were linked to a Hewlett-Packard 4155B parameter analyser. The drain voltage was set to -5 V and the gate voltage was scanned from +20 to -60 V and back to +20 V in 1 V steps. The field effect mobility values were calculated from the gradient of the Isd (source-drain current) vs. VG (gate voltage) characteristic in the linear regime (Lin mob) and the saturation regime (Sat mob). All measurements were performed in air at room temperature. The results are summarized below: Lin mob = 1.7 cm2/Vs Sat mob = 2.2 cm2/Vs On/Off ratio 103 We claim: 1. Compounds of formula I wherein one of Y1 and Y2 denotes -CH= or =CH- and the other denotes -X-, one of Y3 and Y4 denotes -CH= or =CH- and the other denotes -X-, X is -O-, -S-, -Se- or -NR"'-, R is cyclic, straight-chain or branched alkyl or alkoxy having 1 to 20 C-atoms, or aryl having 2-30 C-atoms, all of which are optionally fluorinated or perfluorinated, R' is H, F, CI, Br, I, CN, straight-chain or branched alkyl or alkoxy having 1 to 20 C-atoms and optionally being fluorinated or perfluorinated, optionally fluorinated or perfluorinated aryl having 6 to 30 C-atoms, or CO2R", with R" being H, optionally fluorinated alkyl having 1 to 20 C-atoms, or optionally fluorinated aryl having 2 to 30 C-atoms, R"' is H or cyclic, straight-chain or branched alkyl with 1 to 10 C-atoms, m is 0 or 1, n is 0 or 1. 2. Compounds of claim 1, selected from the following formulae: wherein R, R' and X are as defined in claim 1. 3. Compounds of claim 1 or 2, which are a mixture of isomers with the following formulae: wherein R, R' and X are as defined in claim 1. 4. Compounds of claim 1 or 2, which are a mixture of isomers with the following formulae: wherein R, R' and X are as defined in claim 1. 5. Compounds of claim 1 or 2, which are a mixture of isomers with the following formulae: wherein R, R' and X are as defined in claim 1. 6. Compounds or mixtures of isomers according to one or more of claims 1 to 5, wherein R' is alkyl, perfluoroalkyl oralkoxy having 1-8 C-atoms, optionally fluorinated aryl having 5-30 C-atoms, F, CI, Br, I, CN, CO2R" or perfluoroaryl, with R" being H, C1-20 alkyl or C5-30 aryl. 7. A formulation comprising one or more compounds or mixtures of isomers according to one or more of claims 1 to 6, and further comprising one or more organic solvents. 8. An electronic device comprising one or more compounds, mixtures of isomers or formulations according to one or more of claims 1 to 7. 9. An electronic device according to claim 8, which is a transistor comprising: a gate electrode; a semiconductor comprising one or more compounds, mixtures or formulations according to one or more of claims 1 to 7; an insulator between said gate electrode and said semiconductor; a source electrode; and a drain electrode. 10. An electronic device according to claim 8, which is a photovoltaic apparatus comprising: a transparent anode; a semiconductor comprising one or more compounds, mixtures or formulations according to one or more of claims 1 to 7; an n-type material; and a cathode. Novel silylethynylated heteroacenes and formulations and electronic devices made with those compounds are disclosed.

Full Text

Silyiethynylated Heteroacenes
And Electronic Devices Made Therewith
Technical Field
The present invention relates generally to the field of organic
semiconductors and, more particularly, to silyiethynylated heteroacenes as
well as to formulations and electronic devices made with these
compounds.
Background of the Invention
Display technology is expected to become a dominant sector of high-tech
industry in the future. It is also expected that the fiat panel display
technology will be revolutionized by the use of organic semiconductors that
will allow manufacture of cheap, flexible, lightweight, fully portable flat
panel displays with no apparent limits to their size. It is predicted that due
to the lower manufacturing cost, organic semiconductor based displays will
eventually gain dominance over amorphous silicon based counterparts and
the respective market share will grow to $1.6 billion by 2007. To realize
these goals, however, significant breakthroughs will have to take place in
the area of organic semiconductor material and device processing.
Interest in organic thin film transistors (OTFTs) for possible use in displays,
sensors and other large area electronic applications has been increasing
rapidiy. Best reported organic thin film transistor (OTFT) device
performance rivals or exceeds that of hydrogenated amorphous silicon
devices, and low OTFT process temperatures allow fabrication on a range
of surfaces including cloth, paper or lower temperature polymeric
substrates.
Organic semiconductors for use in OTFTs can be broadly divided into two
groups as high and low mobility materials. High mobility materials have
mobility > 0.1 cm2/V-s, usefully large carrier energy bandwidth (> 0.1 eV)
and weak or sometimes absent temperature activation of mobility. To date,
most high mobility organic semiconductors have been small molecule
materials (with pentacene the most notable example) and most have been
deposited by vacuum sublimation or from a solution precursor with a high-
temperature (> 150° C) conversion step. Low mobility materials have
mobility from about 10-5 - 10-1 cm2/V-s, typically transport carriers by
hopping, and have strong temperature activation of mobility. Most
polymeric organic semiconductors fall into this group and many have the
potential advantage that they can be deposited from solution.
To date, there have been few reports of low-temperature solution
processed organic semiconductors with high mobility. In addition, even for
low mobility materials, current solution deposition techniques have not
demonstrated material structure, thickness and property control
comparable to vacuum deposition techniques.
It was an aim of the present invention to provide new organic
semiconductor compounds with advantageous properties, especially with
relatively low OTFT process temperatures and relatively high mobility.
Another aim of the present invention was to extend the pool of organic
semiconductor compounds available to the person skilled in the art. Other
aims of the present invention are immediately evident to the person skilled
in the art from the following detailed description.
It was found that these aims can be achieved by providing novel
silylethynylated heteroacenes as claimed in the present invention.
M. Payne, S. Odom, R. Parkin, J. Anthony, Org. Lett. 2004, Vol. 6, No. 19,
p.3325-3328, discloses silylethynylated heteroacenes, but does not
disclose compounds according to the present invention.
Summary of the Invention
The present invention relates to compounds of formula I

wherein
one of Y1 and Y2 denotes -CH= or =CH- and the other denotes -X-,
one of Y3 and Y4 denotes -CH= or =CH- and the other denotes -X-,
X is-O-, -S-,-Se-or-NR"'-,
R is cyclic, straight-chain or branched alkyl or alkoxy having 1 to 20,
preferably 1 to 8 C-atoms, or aryl having 2-30 C-atoms, all of which
are optionally fluorinated or perfluorinated, with SiR3 preferably
being trialkylsilyl,
R' is H, F, CI, Br, I, CN, straight-chain or branched alkyl or alkoxy
having 1 to 20, preferably 1 to 8 C-atoms and optionally being
fluorinated or perfluorinated, optionally fluorinated or perfluorinated
aryl having 6 to 30 C-atoms, preferably C6F5, or CO2R", with R"
being H, optionally fluorinated alkyl having 1 to 20 C-atoms, or
optionally fluorinated aryl having 2 to 30, preferably 5 to 20 C-
atoms,
R"' is H or cyclic, straight-chain or branched alkyl with 1 to 10 C-
atoms, preferably H,
m is 0 or 1,
n is 0 or 1.
The invention further relates to a formulation comprising one or more
compounds of formula I, and preferably further comprising one or more
organic solvents.
The invention further relates to electronic devices, in particular transistors,
organic field effect transistors (OFETs), organic thin film transistors
(OTFTs), organic photovoltaic (OPV) devices, integrated circuits (ICs),
sensors, radio frequency identification (RFID) tags and solar cells,
comprising one or more compounds of formula I or formulations
comprising them.
Brief Description of the Drawings
The accompanying drawing incorporated in and forming a part of the
specification, illustrates several aspects of the present invention and
together with the description serves to explain certain principles of the
invention. In the drawing:
Figure 1a and 1b are schematical illustrations of two possible
embodiments for the field-effect transistor of the present invention; and
Figure 2a and 2b are schematical representations illustrating two possible
embodiments of the photovoltaic apparatus of the present invention.
Reference will now be made in detail to the present preferred
embodiments of the invention as illustrated in the accompanying drawing
figures.
Detailed Description of the Invention
The novel compounds of the present invention may be broadly described
as silylethynylated heteroacenes (anthra(diheterocycles),
tetra(diheterocycles) and penta(diheterocycles) compounds).
Preferred compounds of formula I are those wherein Y1 = Y3 and Y2 = Y4,
and those wherein Y1 = Y4 and Y2 = Y3.
Preferred compounds of formula I are selected from the following
formulae:
wherein R, R' and X are as defined above.
In accordance with yet another aspect of the present invention a
formulation comprising one or more of the novel compounds of formula I,
A1, A2, B1, B2, C1 or C2 and one or more solvents is provided. The
solvents are preferably organic solvents, very preferably selected from
alkylated and/or fluorinated or chlorinated benzenes like toluene, xylene
and the like, anisole or its alkylated and/or fluorinated derivatives, tetralin,
indane, decalin, N,N-dimethylaniline, N-methylpyrrolidone, N,N-
dimethylformamide or pyridine.
In accordance with yet another aspect of the present invention a transistor
is provided. The transistor preferably comprises a gate electrode, a
semiconductor constructed from the novel compounds or formulations of
the present invention, an insulator between the gate electrode and the
semiconductor, a source electrode and a drain electrode.
in accordance with yet another aspect of the present invention, a
photovoltaic device is provided. The photovoltaic device preferably
comprises a transparent anode, a semiconductor constructed from the
novel compounds or formulations of the present invention, an n-type
material and a cathode.
Suitable methods and materials for preparing electronic devices like
transistors and photovoltaic devices and their components, like for
example the gate, source or drain electrode, cathode, anode or n-type
material (electron transporter), are known to the person skilled in the art
and are described in the literature, for example in WO 02/45184 A1, WO
03/052841 A1, WO 2004/013922 A2 and the references cited therein.
Very preferred are compounds of formulae I, A1, A2, B1, B2, C1 and C2
wherein
- X is -O-,-Se-or-NH-,
- X is -S-,
- R' is not H,
- R' is F, CI, Br or COOH, very preferably F, CI or Br, most preferably F,
- R is straight-chain or branched alkyi having 1 to 8 C atoms, preferably
methyl, ethyl, propyl which is n-propyl or isopropyl, or butyl which is n-
butyl, sec-butyl, isobutyl or tert-butyl,
- R"' - is H,
- m=n=0,
- if X is S, then R' is not H,
- if m=n=0 and X is S, then R' is selected from optionally fluorinated or
perfluorinated aryl having 6 to 30 C-atoms, preferably C6F5, F, CI, Br, I,
CN and CO2R", very preferably from F, CI and Br.
The silylethynylated heteroacenes are usually prepared as a mixture of
isomers. Formula I thus covers isomer pairs wherein in the first isomer Y1
= Y3 and Y2 = Y4, and in the second isomer Y1 = Y4 and Y2 = Y3.
Formulae A1 and A2 represent the two isomers of anthra (diheterocycles).
Formulae B1 and B2 represent the two isomers of tetra (diheterocycles).
Formulae C1 and C2 represent the two isomers of penta (diheterocycles).
The novel compounds of the present invention include both the mixture of
the isomers of formulae A1, A2; B1, B2; or C1, C2 and the pure isomers
A1, A2, B1, B2, C1 or C2.
The isomers A1, A2, B1, B2, C1 or C2 may be purified from the mixture of
isomers of formulae A1, A2; B1, B2; or C1, C2 by methods known to those
skilled in the art including but not limited to high-performance liquid
chromatography (HPLC).
The novel compounds of the present invention can be prepared by a
relatively simple and straightforward method. Specifically, the
silylethynylated heteroacenes are easily made by the addition of an
alkynyllithium to the corresponding acenequinone, followed by reductive
workup with either HI or tin (II) chloride:

This type of reaction is well-described in:
Miller, G. P.; Mack, J.; Briggs, J. Org. Lett. 2000, 2, 3983,
Anthony, J, E,; Eaton, D. L; Parkin, S. R. Org. Lett, 2002, 4, 15,
Anthony, J. E.; Brooks, J. S.; Eaton, D. L.; Parkin, S. J. Am. Chem, Soc.
2001, 123, 9482,
Payne, M M.; Odom, S. A.; Parkin, S. R.; Anthony, J..E. Org. Lett. 2004
6, 3325.
The acenequinone is very easily prepared by a 4-fold aldol condensation
between a dialdehyde and commercially-available 1,4-cyclohexanedione:

This condensation is well-described in;
De ia Cruz, P.; Martin, N.; Miguel, F.; Seoane, C; Albert, A.; Cano, H.;
Gonzalez, A.; Pingarron, J. M. J. Org. Chem. 1992, 57, 6192.
The "R" group of these dialdehydes is typically installed by the following
sequence:

This procedure is described for thiophene dialdehyde in detail in:
Laquindanura, J. G.; Katz, H. E.; Lovinger, A. J. J. Am. Chem. Soc. 1998,
120, 664.
Compounds of the present invention wherein R' is halogen, e.g. F or Br,
can be prepared according to or in analogy to reaction schemes 1 and 2:
Scheme 1
Thus the "base unit" for all of these materials is the heterocyclic
dialdehyde. Many of these heterocyclic dialdehydes are known in the
literature, and some are even commercially available:
Thiophene 2,3-dialdehyde is commercially available from Aldrich and
Acros chemical.
Furan 2,3-dialdehyde is prepared as described in Zaluski, M. C; Robba,
M.; Bonhomme, M. Bull. Chim. Soc. Fr. 1970, 4,1445.
Selenophene 2,3-dialdehyde is prepared as described in Paulmier, C;
Morel, J.; Pastour, P.; Scmard, D. Bull. Chim. Soc. Fr. 1969, 7, 2511.
Other heterocyclic dialdehydes can be prepared by the same methods
outlined for the synthesis of the furan and selenophene compounds. The
following synthesis and examples are prepared to further illustrate the
invention, but it is not to be considered as limited thereto.
A number of useful electronic devices may be constructed from the novel
compounds of the present invention. A typical field effect transistor (FET)
according to the present invention (10) is illustrated in Figure 1a. The FET
(10) is comprised of.a gate electrode (12) of a type known in the art, an
insulator or gate dielectric (14) also of a type known in the art and a
semiconductor (16) in the form of a thin layer or film of the compounds of
the present invention. In addition, the FET (10) includes a conductive
source electrode (18) and a drain electrode (20) both operatively
connected to the semiconductor (16).
The insulator (14) may, for example, be a dielectric or metal oxide or even
an insulating polymer like polymethylmethacrylate). The conducting
source and drain electrodes (18), (20) may be metals known in the art to
be useful as electrodes, heavily doped semiconductors such as silicon or
even a conducting polymer.
The FET illustrated in Figure 1a is known as a bottom-gate, top-contact
configuration. An alternative embodiment of the FET (10) of the present
invention is illustrated in Figure 1b. This configuration is known as a
bottom-gate, bottom-contact configuration.
Another alternative embodiment of the FET (10) of the present invention is
illustrated in Figure 1c. This configuration is known as a top-gate
configuration, and is comprised of a substrate (22) of a type known in the
art, a conductive source electrode (18) and a drain electrode (20), both
operatively connected to a semiconductor (16) in the form of a thin layer or
film of the compounds of the present invention, an insulator or gate
dielectric (14) of a type known in the art, and a gate electrode (12) also of
a type known in the art.
The gate electrode (12), source electrode (18) and drain electrode (20)
may again be any sort of conductor gold, silver, aluminum, platinum,
heavily-doped silicon or an organic conducting polymer. The insulator or
gate dielectric (14) can be an oxide such as aluminum oxide or silicone
oxide or an insulating polymer such as polymethylmethacrylate). In either
configuration the compound of the present invention may be applied either
by solution or vapor methods to form the semiconductor (16).
Optionally the semiconductor (16) comprises one or more organic binders,
preferably polymeric binders, as described for example in WO
2005/055248 A1, to adjust the rheological properties, preferably in a
proportion of binder to semiconductor from 20:1 to 1:20, preferably 10:1 to
1:10, more preferably 5:1 to 1:5 by weight. The binder polymers may also
be semiconducting.
A typical photovoltaic apparatus according to the present invention (22) is
illustrated in Figure 2a. The photovoltaic apparatus (22) comprises a
transparent conductive electrode or anode (24), a semiconductor (26) in
the form of a thin layer or film of the compound of the present invention
and a bottom electrode or cathode (28).
In the photovoltaic apparatus embodiment illustrated in Figure 2a, a layer
(30) of n-type material is provided between the semiconductor (26) and the
cathode (28). In the photovoltaic apparatus (22) illustrated in Figure 2b the
semiconductor (26) comprises the compound of the present invention
blended with an n-type material.
In the case of organic solar cells, the compounds of the present invention
are typically used as the hole transporter (the "p-type" material). This
material must be used in conjunction (i.e. as a blend) with an n-type
material, defined as any electron-accepting compound. Suitable and
preferred examples for n-type or acceptor materials are fullerenes like
C60, or solubilized derivatives thereof, or perylene diimides like PTCBI
(3,4,9,10-perylenetetracarboxylic bisbenzimidazole).
The photovoltaic apparatus (22) can typically be constructed in the two
ways illustrated in Figures 2a and 2b. As illustrated in Figure 2a, the p-
type compound and the n-type compound are both deposited from vapor
or solution in sequential steps, leading to a single heterojunction interface.
Alternatively, as illustrated in Figure 2b, the p-type material and the n-type
material may be mixed and deposited from solution on the anode prior to
deposition of the cathode material. In this embodiment the p-type and n-
type materials phase segregate, leading to multiple heterojunctions in the
bulk. In both cases the anode material typically has a high work function
and is transparent (ITO or (10) oxide on glass or plastic). In contrast, the
cathode (28) is a low work function conductor, and is typically reflective to
improve efficiency (aluminum, silver or an indium-gallium eutectic). In
either case the anode layer can be pre-coated with a commercial
conducting polymer like PEDOT (poly(3,4-ethylenedioxythiophene)) or a
blend of PEDOT:PSS (poly(styrenesulfonate)) in order to improve charge
injection efficiency.
The following examples are intended to explain the invention without
restricting it. The methods, structures and properties described hereinafter
can also be applied or transferred to materials that are claimed in this
invention but not explicitly described in the foregoing specification or in the
examples.
Unless stated otherwise, above and below percentages are per cent by
weight and temperatures are given in degrees Celsius.
Example 1
5,11-Bis(triethylsllylethynyl)anthra[2,3-b:6,7-b']dithiophene
and 5,11-Bis(triethylsilytethynyl)anthra[2,3-b:7,6-b']dithiophene.
To an oven-dried 250-mL round-bottom flask equipped with a stir bar and
cooled under N2 was added hexanes (20 ml) and 0.38 mL of triethyisilyl
acetylene (2.0 mmol), followed by the dropwise addition of 0.73 ml of
n-BuLi (1.8 mmol, 2.46 M solution in hexanes). This mixture was stirred for
1 h, then hexanes (60 ml) and anthradithiophenequinone (prepared by
method described in De la Cruz, P. et al. J. Org. Chem. 1992, 57,6192.)
(0.16 g, 0.34 mmol) were added. The mixture was heated at 60° C
overnight, then quenched with 0.5 mL of water. SnCl2 2H2O (0.50 g, 2.2
mmol) in 10 % aq. HCI (1 ml) was added and the mixture was stirred for 2
h at 60° C. The solution was dried over MgSO4, then loaded onto a thick
pad of silica. The silica was rinsed with hexanes (500 ml), then the product
was eluted using hexanes: DCM (5:1). Removal of solvent yielded 0.18 g
(0.31 mmol, 91 %) of a reddish powder. Recrystallization from hexanes
yielded thick dark-red plates. Recrystallized 3x from hexanes. Yield: 91 %.
MP: 151° C. 1H-NMR (400 MHz, CDCI3) d = 9.18 (s,2H), 9.13 (s, 2H), 7.57
(d, J= 5.6 Hz, 2H, syn isomer), 7.57 (d, J = 5.2 Hz, 2H, anti isomer), 7.47
(d, J= 5.6 Hz, 2H), 1.27 (tt.J = 8.0 Hz, 1.6 Hz, 18H), 0.94 (q, J = 8.0 Hz,
1.2H). 13C-NMR (400 MHz, CDCI3) d = 140.27, 140.18, 1.39.82, 139.68,
133.70, 130.11 (2C), 130.01 (2C), 129.92 (2C), 129.81, 129.17, 123.95,
121.50,121.44, 120.20, 118.05, 117.69,8.04 (2C), 7.82, 4.93 (2C), 4.50.
Anal, calcd % C: 72.02, % H: 6.75. Found % C: 71.68, %H: 6.75.
For preparation of systems with alternative "R" groups, a different
acetylene would be substituted for triethylsilyl acetylene in the above
preparation. For preparation of systems where "R'" is different from "H"
the requisite precursor quinones can be prepared as described in
Laquindanum, J. G. et al., J. Am. Chem. Soc, 1998,120, 664.
Example 2
Tetra[2,3-b:8,9-b']dithiophene-5,13-dione and Tetra[2,3 -b:9,8-
b']dithiophene-5,13-dione.
A 1:2 mixture of 2,3-thiophenedicarboxaldehyde (0.85 g, 6.07 mmol) and
benzo[1,2-b]thiophene-4,5-dicarboxaldehyde (1.66 g, 8.70 mmol) was
dissolved in THF (200 ml) in a 500-ml round-bottom flask with a stir bar,
then 1,4-cyclohexanedione (0.83 g, 7.40 mmol) was added and the
solution was stirred until uniform. After the addition of 15 % KOH (2 ml),
precipitate began to form immediately, and vigorous stirring was continued
overnight. The solution was filtered to yield 3.87 g of a light brown powder
made up of insoluble quinones which were used directly in the next step:
MS (70 eV, El) m/z 370 (100 %, M+).
5,13-Bis(tris(trimethylsilyl)silylethynyl)tetra[2,3-b:8,9-b']dithiophene
and 5,13-Bis(tris(trimethylsilyl)sl/ylethynyl)tetra[2,3-b:9,8-
b+]dithiophene.
To an oven-dried 500-mL round-bottom flask cooled under N2 and
equipped with a stir bar was added hexanes (150 ml) and
tris((trimethylsily1)silyl acetylene (14 g, 51.1 mmol). n-BuLi (19.5 ml,
47,9 mmol, 2.6 M in hexanes) was added dropwise and the mixture was
stirred for 2 hr. The above quinone mixture (3.87 g) was added and stirring
was continued overnight, followed by the addition of anhydrous THF (20
ml) and additional stirring for 2 d. Water (2 ml) and a solution of SnCI2-
H2O (10.0 g, 44 mmol) in 10 % HCI (20 ml) was added and the solution
was stirred for 2 hr. DCM (100 ml) was then added and the organic layer
was separated, dried over MgSO4, and rinsed through a thin pad of silica
(DCM). Solvent was concentrated to a volume of 10 ml, then diluted with
hexanes (200 ml), and rinsed onto a thick pad of silica. The silica was
rinsed with hexanes (600 ml), then hexanes: DCM (1:1) to elute the
product mixture, and solvent was removed from this second fraction.
Using column chromatography (hexanesrethyl acetate (9:1)), 0.82 g of the
desired tetradithiophene were isolated. The tetradithiophene was
recrystallized from acetone to yield dark-blue needles. 1H-NMR (400 MHz,
CDCI3) d = 9.53 (s, 1H), 9.45 (s, 1H), 9.16 (s, 1H), 9.13 (s, 1H), 8.53 (s,
1H), 8.49 (s, 1H), 7.54 (d, J = 5.6 Hz, 1H), 7.50 (d, J= 6.2 Hz, 1H), 7.41 (s,
1H), 7.40 (s, 1H), 1.08 (s, 54H). 13C-NMR (400 MHz, CDCI3) d = 140.49,
140.46, 140.20, 140.19, 139.92,139.86,138.98,138.90,130.27, 129.74,
129.61,126.84,125.35,124.02,123.72,122.34,122.29,121.64,121.04,
120.99, 120.29, 107.05, 106.72,105.64, 104.85, 104.76, 11.5. UV-VIS
(DCM): ?abs (e): 244 (18700), 300 (32400), 328 (61800), 372 (6940), 392
(5610), 465 (2110), 528 (766), 555 (1340), 599 (2810). 653 (4960). IR
(KBr) vm8X (cm-1): 2956 (m), 2945 (m), 2860 (s), 2129 (m), 1460 (m), 1400
(m), 1366 (s), 1061 (m), 997 (w), 882 (s),752 (s), 720 (vs), 661 (s), 586
(m).
Example 3
Penta[2,3-b:9,10-b']dithiophene-6,14-dione and Penta[2,3 -b:10,9-
b]dithiophene-6,14-dione.
In a 500-mL round-bottom flask equipped with a stir bar, benzo[1,2-
b]thiophene-4,5-dicarboxaldehyde (2.35 g, 12.4 mmol) was dissolved in
THF (200 ml). 1,4-Cyclohexanedione (0.70 g, 6.2 mmol) was added and
stirred until the solution was uniform, then 15 % KOH (2 ml) was added.
Vigorous stirring was continued overnight, then the solution was filtered
and rinsed with ether (20 ml) and DCM (20 ml). The brown solid was
heated to reflux in DMF (400 ml) for 2 hr, then cooled and filtered to yield
1.6 g (3.8 mmol) of the desired quinone as a light brown insoluble powder.
MS (70 eV, El) m/z 420 (42 %, M+).
6,14- Bis(tri(t-butyl)silylethynyl)-penta[2,3-b:9,10-b']dithiophene and
6,14-Bis(tri(t-butyl)silylethynyl)-penta[2,3:10,9-b']dithiophene(6b).
To an oven-dried 250-ml round-bottom flask equipped with a stir bar and
cooled under N2 was added anhydrous THF (40 mL) and tri(t-butyl)silyl
acetylene (3.59 g, 16,0 mmol). n-BuLi (5.7 ml, 14 mmol, 2.6 M in hexanes)
was added dropwise and the solution was stirred for 1 hr, then the
abovementioned quinone (1.6 g, 3,8 mmol) was added. After stirring for 24
hr, additional anhydrous THF (40 ml) was added and stirring was
continued for 3 days. Water (2 ml) and a solution of SnCI2 • H2O (1.0 g, 4.4
mmol) in 10 % HCI (2 ml) was added and the solution was stirred for 2 hr.
DCM (200 ml) was added and the organic layer was separated, dried over
MgSO4, and rinsed through a thin pad of silica (DCM). Solvent was
concentrated to a volume of 10 ml then diluted with hexanes (200 ml). This
solution was poured onto a thick pad of silica and rinsed with hexanes
(500 ml), then hexanes:DCM (1:1) to elute the product. Removal of solvent
yielded 0.44 g (0.53 mmol, 14 %) of product as a sparingly-soluble green
powder. Recrystallization from toluene, then from CS2 yielded 6b as
slender dark green needles. 1H-NMR (400 MHz, CDCI3) d - 9.49 (s, 2H),
9.41 (s, 2H), 8.41 (s, 2H), 8.38 (s, 2H), 7.46 (d, J - 5.6 Hz, 2H), 7.36 (s, J =
5.6 Hz, 2H), 1.50 (s, 54H). 13C-NMR (400 MHz, CS2/C6D6) d = 140.52,
138.91, 130,98, 130.86,130.67, 130.55, 129.57, 128.92,128.88, 128.78,
128.75, 128.26, 127.96, 127.94, 127.59, 126.11, 124.08, 122.94, 121.61,
109.10, 106.70,97.94,31.12, 30.81,28.89,22.73. UV-VIS (DCM): ?abs, (e):
277 (42500), 342 (69500), 373 (6350), 398 (2770),416 (2740),441 (2220),
475 (1730), 577 (145), 623 (474), 690 (1170),762 (2600). IR (KBr) vmax
(cm-1): (cmol): 3400 (w), 2972 (m), 2935 (m), 2859 (5). 2133 (5), 1648 (w),
1385 (s), 1115 (m), 1032 (w), 890 (s), 820 (s), 748 (s), 619 (s). Anal calcd
for C54H66S2Si2 • H2O % C: 75.99, % H: 8.03. Found % C: 75.61, %H: 7.93.
MS (70 eV, El) m/z 834 (100 %, M+), 777 (63 %, M+ -C4H9). MP: 268 ° C
(dec).
Example 4
2,8-Dibromo-5,11-bis(triethytsilylethynyl)anthra[2,3-b:6,7-b']
dithiophene and 2,8-dibromo-5,11-bis(triethylsilylethynyl)anthra[2,3-
b:7,6-b']ithiophene
Step 1: 5-bromo-thiophene-2,3-dicarbaldehyde.
2,3-Bis(1,3-dioxolan-2-yl)thiophene (13.51 g, 59.2 mmol) was dissolved in
THF (200 ml), followed by the addition of N-bromosuccinimide (11.0 g,
61.2 mmol). This mixture was stirred in the absence of light overnight (~15
h), then water ( 300 ml) was added and the product was extracted with
ether (3 x 200 ml). The organic phases were combined and washed with
sat. aq. NaHCO3 solution and brine, then dried over Na2SO4. The solvent
was removed under reduced pressure. The residue was dissolved in THF
(150 ml) then 2N HCI solution (40 ml) was added. This mixture was heated
at reflux for 1 h. After cooling to room temperature, the reaction mixture
was poured into water (300 ml) and extracted with ether (3 x 200 ml). The
extracts were combined and washed with sat. aq. NaHCO3, water and
brine, then dried over Na2SO4. The solvent was removed under reduced
pressure. The residue was purified by column chromatography, eluting
with petrol/ethyl acetate (10:0 to 7:3), to give a brown solid (1.43 g, 11%).
1H NMR (300MHz, CDCl3): d(ppm) 10.38 (s, 1H, CHO), 10.26 (s, 1H,
CHO), 7.60 (s, 1H, Ar-H); 13C NMR (75 MHz, CDCl3): d(ppm) 183.3, 181.4,
148.4, 143.6, 132.4, 123.9; MS (m/e): 220 (M+), 218 (M+), 191,189,
161,163,111,82,57,39.
Step 2: 2,8-dibromoanthra[2,3-b:6,7-b']dithiophene-5,11-dione and
2,8-dibromoanthra[2,3-b:7,6-b']dithiophene-5,11-dione.
5-Bromo-thiophene-2,3-dicarboxaldehyde (0.91 g, 4.2 mmol) was
dissolved in EtOH (150 ml), followed by the addition of 1,4-cyclohexane
dione (0.24 g, 2.1 mmol). Upon addition of a 15 % KOH solution (5 ml) with
strong stirring, a precipitate began to form immediately. The mixture was
stirred for an additional hour. The precipitate was collected and washed
with water and ethanol, then dried under vacuum to give yellow solid of low
solubility (0.85 g, 86%). IR (cm-1): 1668 (C=O), 1574, 1488, 1317, 1253.
Step 3: 2,8-dibromo-5,11-bis(triethylsilylethynyl)anthra[2,3-b:6,7-b']
dithiophene and 2,8-dibromo-5,11-bis(triethylsilylethynyl)anthra[2,3-
b:7,6-b']dithiophene.
To a solution of triethylsilylacetylene (1.20 g, 8.55 mmol) in dioxane (70 ml)
was added BuLi (1.6 M in hexanes, 5.3 ml, 8.48 mmol) dropwise at RT.
This solution was stirred for 30 min, followed by the addition of 2,8-
dibromoanthra[2,3-b:6,7-b]dithiophene-5,11-dione (0.80 g, 1.67 mmol).
The resultant mixture was heated at reflux for 3 h. After cooling, solid
SnCI2 (5 g), then cone. HCI solution (10 ml) was added, and the mixture
stirred for 30 min. The precipitate was collected by filtration and washed
with water and acetone to give a deep purple solid, which was recystalfized
with acetone/THF, to give purple crystals (0.59 g, 49%). 1H NMR
(300MHz, CDCI3): d(ppm) 8.93 (m, 4H, Ar-H), 7.45 (s, 1H, Ar-H). 7.46 (s,
1H, Ar-H), 1.23 (m, 18H, CH3), 0.91 (m, 12H, CH2); 13C NMR (75 MHz,
CDCI3): d(ppm) 140.7, 140.6, 139.8,139.7, 130.0, 129.9,129.6,129.5,
126.4, 120.3, 120.2, 119.64, 119.59, 119.12, 119.06, 117.7, 107.3, 102.9,
7.85, 4.70; IR: 2126 cm-1 (C=C).
Example 5
2,8-Difluoro-5,11-bis(triethylsilylethynyl)anthra[2,3-b:6,7-b']
dithiophene and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthra[2,3-
b:7,6-b']dithiophene
The synthesis was carried out as described in example 4, but using the
corresponding fluoro compounds instead of the bromo compounds.
1H NMR (300MHz, CDCI3): d(ppm) 8.91 (s, 2H), 8.84 (s, 2H), 6.81 (d, 2H),
1.22 (m, 18H), 0.90 (m, 12H); 13C NMR (75 MHz, CDCI3): d(ppm) 167.83,
163.86, 136.66, 136.61, 136.57, 133.89,130.14, 129.94, 129.58, 129.40,
120.80 (CH), 120.68 (CH), 120.59 (CH), 120.46 (CH), 120.36 (CH), 102.75
(CH), 102.60 (CH), 7.82 (CH3), 4.67 (CH2); IR: 2133 cm-1 (C=C). MS
(m/e): 602 (M+).
The compounds of the present invention demonstrate remarkable physical
and electronic properties. The silyl acetylene unit substituted on the inner
aromatic ring serves two important purposes. First it lends solubility to the
molecule, allowing processing by simple, solution-based methods.
Secondly and perhaps more importantly, this functional group causes the
molecules to self-assemble into it-stacked arrays that are critical to
improved device performance. More specifically, this molecular
arrangement leads to improved conductivity, reduced band gap and field
effect transistors (FETs) devices with a hole mobility of 0.001 to more than
1.0 cm2/Vs.
Example 6
A field effect transistor as shown in Figure 1a was provided. The substrate
for the field-effect transistor consisted of a heavily-doped SI wafer with
thermally grown oxide layer (370 ran), serving as gate electrode and
dielectric. Gold source and drain contacts were evaporated to yield devices
with channel length of 22 urn and channel width of 340 urn. The gold
electrodes were then treated with pentafluorobenzenethiol to improve the
electrode interface. A 1 - 2 wt% solution of the triethylsilyt
anthradithiophene derivative of Example 1 in toluene was spread across
the device surface using a plastic blade, and the solvent allowed to
evaporate. The devices were then heated in air at 90° C for two minutes to
drive off residual solvent.
The triethylsilyl anthradithiophene derivative of Example 1 formed a
uniform film of excellent quality yielding hole mobility of 1.0 cm2A/s with
excellent on/off current ratio (107). The performance of this material is
likely due to the close p-stacked interactions in the crystal. The triethylsilyl
anthradithiophene derivative adopts a 2-D p-stacking arrangement with a
7t-face separation of approximately 3.25 Å. The triethylsilyl
anthradithiophene derivative was also characterized by a p-overlap of 1.57
Å2 and a lateral slip of 2.75, 1.76 Å. All measurements were performed in
air at room temperature and the mobility was calculated from the
saturation currents.
Example 7
A field effect transistor as shown in Figure 1c was provided as follows: On
a glass substrate patterned Au source and drain electrodes were provided
by shadow masking. A self assembling monolayer of pentafluorobenzene-
thiol (electrode injection layer) was spincoated onto the Au electrodes and
washed with IPA. A semiconductor formulation was prepared by dissolving
the difluoro triethylsilyl anthradithiophene derivative of Example 5 in a
concentration of 2 wt.% in 4-methyl anisole. The semiconductor solution
was then spincoated onto the substrate at 500 rpm for 18 seconds
followed by 2000rpm for 60s at room temperature in air and the solvent
was evaporated. The insulator material (Cytop® 809M, available from
Asahi Glass) was mixed 3 parts to 2 parts of perfluorosolvent (FC75, Acros
catalogue number 12380) and then spincoated onto the semiconductor
giving a thickness of approximately 1 urn and the solvent was evaporated.
A gold gate contact was defined over the device channel area by
evaporation through a shadow mask
For the electrical measurements the transistor sample was mounted in a
sample holder. Microprobe connections were made to the gate, drain and
source electrodes using Karl Suss PH100 miniature probe-heads. These
were linked to a Hewlett-Packard 4155B parameter analyser. The drain
voltage was set to -5 V and the gate voltage was scanned from +20 to -60
V and back to +20 V in 1 V steps. The field effect mobility values were
calculated from the gradient of the Isd (source-drain current) vs. VG (gate
voltage) characteristic in the linear regime (Lin mob) and the saturation
regime (Sat mob). All measurements were performed in air at room
temperature. The results are summarized below:
Lin mob = 1.7 cm2/Vs
Sat mob = 2.2 cm2/Vs
On/Off ratio 103
We claim:
1. Compounds of formula I

wherein
one of Y1 and Y2 denotes -CH= or =CH- and the other denotes -X-,
one of Y3 and Y4 denotes -CH= or =CH- and the other denotes -X-,
X is -O-, -S-, -Se- or -NR"'-,
R is cyclic, straight-chain or branched alkyl or alkoxy having 1 to
20 C-atoms, or aryl having 2-30 C-atoms, all of which are
optionally fluorinated or perfluorinated,
R' is H, F, CI, Br, I, CN, straight-chain or branched alkyl or alkoxy
having 1 to 20 C-atoms and optionally being fluorinated or
perfluorinated, optionally fluorinated or perfluorinated aryl
having 6 to 30 C-atoms, or CO2R", with R" being H, optionally
fluorinated alkyl having 1 to 20 C-atoms, or optionally fluorinated
aryl having 2 to 30 C-atoms,
R"' is H or cyclic, straight-chain or branched alkyl with 1 to 10 C-atoms,
m is 0 or 1,
n is 0 or 1.
2. Compounds of claim 1, selected from the following formulae:

wherein R, R' and X are as defined in claim 1.
3. Compounds of claim 1 or 2, which are a mixture of isomers with the
following formulae:

wherein R, R' and X are as defined in claim 1.
4. Compounds of claim 1 or 2, which are a mixture of isomers with the
following formulae:
wherein R, R' and X are as defined in claim 1.
5. Compounds of claim 1 or 2, which are a mixture of isomers with the
following formulae:

wherein R, R' and X are as defined in claim 1.
6. Compounds or mixtures of isomers according to one or more of
claims 1 to 5, wherein R' is alkyl, perfluoroalkyl oralkoxy having 1-8
C-atoms, optionally fluorinated aryl having 5-30 C-atoms, F, CI, Br, I,
CN, CO2R" or perfluoroaryl, with R" being H, C1-20 alkyl or C5-30 aryl.
7. A formulation comprising one or more compounds or mixtures of
isomers according to one or more of claims 1 to 6, and further
comprising one or more organic solvents.
8. An electronic device comprising one or more compounds, mixtures of
isomers or formulations according to one or more of claims 1 to 7.
9. An electronic device according to claim 8, which is a transistor
comprising:
a gate electrode;
a semiconductor comprising one or more compounds, mixtures or
formulations according to one or more of claims 1 to 7;
an insulator between said gate electrode and said semiconductor;
a source electrode; and
a drain electrode.
10. An electronic device according to claim 8, which is a photovoltaic
apparatus comprising:
a transparent anode;
a semiconductor comprising one or more compounds, mixtures or
formulations according to one or more of claims 1 to 7;
an n-type material; and
a cathode.

Novel silylethynylated heteroacenes and formulations
and electronic devices made with those compounds are
disclosed.

Documents:

http://ipindiaonline.gov.in/patentsearch/GrantedSearch/viewdoc.aspx?id=uQG/ktjzrYZEd4GT/8nw7w==&loc=wDBSZCsAt7zoiVrqcFJsRw==

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Patent Number

271461

Indian Patent Application Number

3459/KOLNP/2009

PG Journal Number

09/2016

Publication Date

26-Feb-2016

Grant Date

22-Feb-2016

Date of Filing

05-Oct-2009

Name of Patentee

UNIVERSITY OF KENTUCKY RESEARCH FOUNDATION

Applicant Address

114, ASTECC BLDG. LEXINGTON, KY 40506 U.S.A.

Inventors:

#	Inventor's Name	Inventor's Address
1	ANTHONY, JOHN, E.	949 VILLAGE GREEN AVENUE, LEXINGTON, KY 40509 U.S.A.

PCT International Classification Number

C07F7/08; H01B1/12; H01L51/30

PCT International Application Number

PCT/EP2008/001482

PCT International Filing date

2008-02-25

PCT Conventions:

#	PCT Application Number	Date of Convention	Priority Country
1	07005029.9	2007-03-12	EPO
2	07004633.9	2007-03-07	EPO
3	07006166.8	2007-03-26	EPO