Title of Invention

PROCESS FOR PREPARATION OF ELECTRICAL RESISTANCE ELEMENT

Abstract Process for preparation of an electrical resistance element mainly consisting of a silicide phase of formula Mo(Si1-xAlx) the said process comprising alloying MoSi2 with Al in sufficient quantity and alumina phase such that the resistance element phase forms alumina on the surface of the element, the said element being stable under reducing atmosphere and is intended to be used in connection with sintering of metal powder.
Full Text The present invention relates to a new electrical resistance-heating element of
molybdenum silicide type intended to use in connection with sintering of metal powder.
Resistance-heating elements of the above-mentioned kind are existing since the 1950ies
for instance with the trademark Kanthal Super. These consist usually mainly of a metal
like phase of MoSi2, alternatively of MoxW1-xSi2 and also an oxide phase of type
aluminum silicate. Similar types of material can be used at element temperatures up to
1900°C in oxidizing atmosphere.
What makes this high working temperature possible is, besides the high melting point of
the material (over 2000°C), the oxide layer of SiO2, which will be formed and rapidly
makes the basic material passive against accelerating oxidation and by this makes a long
service time for the heating element possible. This outer layer gives a lasting protection
in several furnace- and heat treating atmospheres, as air, oxygen, nitrogen/ hydrogen
gas, cracked ammonia, and others. Conditions that often limit the use in these
atmospheres are, when a high temperature of the element is prevailing simultaneous
with a too low potential of oxygen, alternatively dew point, in the atmosphere. What
happens if the critical proportions between dew point - temperature of the element is
exceeded is, that the SiCVlayer becomes unstable and by that after a certain time does
not give any protection of the base material. For instance in hydrogen gas this occurs at
an element temperature of 1300°C when the dew point is lower than about -30°C. To
keep the SiO2-layer remaining stable at a temperature of the element of 1450°C, a dew
point over +20°C is required, i.e. a hydrogen gas containing more than 2.3 percent by
volume. The stability properties of the SiO2-layer make up a restriction of the usage of
the element in certain connections.
An application example where such limitation manifests itself is at sintering of metal
powder in order to produce stainless steel. Components of the stainless steel grade
AISI3 16L are above all produced by pressing of powder, alternatively by injection
moulding of metal powder. After evaporation of the binding agent at a low temperature

often a final sintering in the ringc of temperature between 1300-1360°C in reduced
atmosphere is required. The reducing gas can be pure hydrogen gas with a dew point at
-40°C to -60oC, corresponding about 0.01 and 0.001 percent by volume of water
respectively. The low dew point has to be obtained in order to reduce metal oxides
during sintering process and by that resulting in that a material with high density and
good mechanical properties, fn such an application example an element temperature
between 1400 and 1550°C should be required, dependent on the element shape and
furnace design. Under those conditions the SiO2-layer is consequently not stable on
heating elements based on MoSi2.
Heating elements which are used today in many furnaces for sintering of metal powder
in the temperature range over 1250-1300°C are manufactured of above all molybdenum,
but also of tungsten. A limitation of this material is, besides its relatively high total cost
in furnaces, the requirement to hold the elements under all circumstances over 400°C in
an atmosphere deficient in oxygen to avoid, that detrimental oxidation of the pure
molybdenum metal occurs. For example at leakage of furnaces or other breakdowns
those elements can consequently be damaged.
The alternative materials, which exist for electrical resistance heating under these
conditions, are alloys and intermetallic compounds as FeCrAl, NiCr and MoSi2 (e.g.
Kanthal Super as above). The limitations of MoSi2-material were described above.
FeCrAl and NiCr form oxides of Al2O3 and Cr2O3 respectively on the surface under use
in air. In reducing atmosphere, as dry hydrogen gas, the range of temperature under use
is limited to about 1400°C for FeCrAl and 1250°C for for example NiCr of the
trademark Nicrothal 80 respectively.
In case of NiCr-alloys the Cr2CO3 is not stable above this temperature. In case of FeCrAl
the Al2O3-layer certainly remains stable, but the service time of the material at this
temperature is limited by the closely allied smelting temperature of about 1500°C. Thus,
if the FeCrAl should be used for sintering of 316L, the requirements for high element
temperatures would lead to very limited service times.

It would be desirable to use a material that combines the possibility to form alumina on
the surface with a melting temperature considerable higher than 1500aC and by that, if
necessary alternating could be used in reducing and oxidizing atmosphere. Besides, then
the disadvantages of the molybdenum elements could be eliminated since the elements
not always have to be used in an atmosphere deficient in oxygen.
It has surprisingly shown, that by alloying M0S12 with Al in a sufficient quantity and
also an alumina phase, a phase of molybdenum alumina silicide, Mo(Sii-xAlx)2 is
obtained, which is stable in dry hydrogen gas at high temperatures. It has for example
shown under a corrosion test in hydrogen gas at 1450°C, that the compound material
MoSi 1 6Al0.4/Al2O3 does not show any corrosion after 200 hours, but an insignificant
weight increase of 0.2%, which replies to an oxidation of aluminum in the
aluminosliiicide into Al2O3. In a comparing investigation with Kanthal Super 1800,
consisting of MoSi2 and about 20 percent by volume of aluminum silicate it has shown,
that the weight was reduced with about 30% under the same conditions. In this case
besides the SiO2-layer both the MoSi2-phase, Mo5Si3 and Mo3Si and also the aluminum
silicate containing binding agent were reduced.
DESCTRIPTION OF ACCOMPANYING DRAWING
It is reasonable to assume that even other compositions can be used to obtain similar
results. For instance it has shown, that MoSi1.75Alo.25/Al2O3 forms Al2O3 under
oxidation in air at 1200°C. At values for x in the range of 0.1-0.6 the hexagonal, so
called C-40-phase of Mo(Si,Al)2, is stable. It is reasonable to assume that the present
invention even could be applied with those compositions. The value of x should amount
to 0.10-0.60, preferably 0.20-0.55. It is also beyond all doubt, that molybdenum could
be substituted by tungsten to Mo1-yWySi1.xAlx under maintenance of the desirable
properties for sintering of metal powder. Herewith y should amount to a numerical
value in the range of 0-0.4, preferably 0.05-0.20. Substitution of Mo with W can be
done with maintained crystal structure, Cl 1, and thereby increase the service
temperature of the heating element with the composition Mo1-yWySi2. This is applied for
instance for heating elements with the trademark Kantahl Super 1900, which in
similarity with Kantha! Super 1800 form SlO2 on the surface. Analogous the C-40-
phase will be formed even at alloying of the aluminum at the substitution of

moljybdenum with tungsten according to Mo1.yWySii.xAlx. The remaining phases, which
can be formed at high x-values, in the system Mo-Si-Al are for example aluminides of
molybdenum, which appears from the phase diagram Figure 1, valid at 1823 K.
Under experimental work in connection with the present invention it was proved
suitable, that the silicide phase amounts to between 65 and 95 percent by weight of the
total weight of the resistance element, preferably between 75 and 85 percent by weight.
As mentioned above, the resistance element contains besides the silicide phase alumina
too.
The balance can consist of SiO2, suitably between 0 and 1 percent by weight.
The above-described invention could also be used in other sintering applications, where
low oxygen potential, alternatively a low dew point, is required. This is sometimes the
case at sintering of powder of tungsten heavy alloy, certain types of alloys of titanium
and intermetallic compounds, and also of low alloyed steels. For instance the heavy
alloy W-Cu have been sintered in hydrogen at 1400°C with a dew point at -36oC.
The above mentioned formed alumina is expected to be stable up to about 1595°C,
which is the eutectic temperature in the system SiO2-3Al2O3-2SiO2 (mullite). This oxide
is expected to have different corrosion properties than the pure alumina. Up to at least
the temperature of the element of around 1595°C could thereby this material constitute a
general alternative to the heating elements of molybdenum-type.

We claim:
1. A process for preparation of an electrical resistance element mainly consisting
of a silicide phase of formula Mo(Si1.xAlx) the said process comprising
alloying MoSi2 with Al in sufficient quantity and alumina phase such that the
resistance element phase forms alumina on the surface of the element, the said
element being stable under reducing atmosphere and is intended to be used in
connection with sintering of metal powder.
2. A process as claimed in claim 1 wherein Mo used is partly substituted by W
for forming a silicide phase according to the formula Mo1.yWy (Si1.xAlx)2,
which phase forms alumina on the surface of the element.
3. A process as claimed in claim 1 wherein the x amounts to between 0.10 and
0.60, preferably between 0.20 and 0.55.
4. A process as claimed in anyone of claims 1 to 3 wherein y amounts to between
0 and 0.40, preferably between 0.05 and 0.20.
5. A process as claimed in any preceding claims wherein the silicide phase
amounts to between 65 and 95 percent by weight of the total weight of the
resistance element, preferably between 75 and 85 percent by weight.
6. A process as claimed in any preceding claims wherein the element contains
besides the mentioned silicide phase 0 to 40 percent by volume of Al2O3,
preferably 10 to 20 percent by volume.
7. A process as claimed in any preceding claims wherein the element contains a
balance of SiO2 besides the mentioned silicide phase and prospective Al2O3
8. A method of sintering a metal powder comprising:
providing a reducing atmosphere:
heating the metal powder with a heating element, prepared by the process of
any of the preceding claims 1-7, disposed in the reducing atmosphere, the
heating element made from a material having a composition comprising
Mo(Sii-xAlx)2, wherein x is 0.1 to 0.6, the material comprising a silicide phase

which forms a protective alumina layer on a surface of the element while
heating the metal powder in the reducing atmosphere.
9. A method as claimed in claim 8 wherein the powder is heated to a temperature
above 1500°C.
10. The method as claimed anyone of claims 8 to9 wherein the reducing
atmosphere a comprises hydrogen gas.
11. The method as claimed in anyone of claims 8 to 10 wherein W is partly
substituted for Mo thereby forming a material heating element comprising
Mo1-yWy(Si1-xAlx)2, wherein y is 0 to 0.40.
12. The method as claimed in anyone of claims 8 to 11 wherein y is 0.05 to 0.20.
13. The method as claimed in anyone of claims 8 tol2 wherein x is 0.20 to 0.55.
14. The method as claimed in anyone of claims 8 to 13 wherein the metal powder
comprises an iron based metal powder, preferably stainless steel.

Process for preparation of an electrical resistance element mainly consisting of a
silicide phase of formula Mo(Si1-xAlx) the said process comprising alloying MoSi2
with Al in sufficient quantity and alumina phase such that the resistance element
phase forms alumina on the surface of the element, the said element being stable
under reducing atmosphere and is intended to be used in connection with sintering of
metal powder.

Documents:

IN-PCT-2001-966-KOL-(02-04-2012)-PETITION UNDER RULE 138.pdf

IN-PCT-2001-966-KOL-(30-04-2012)-FORM-27.pdf

in-pct-2001-966-kol-granted-abstract.pdf

in-pct-2001-966-kol-granted-assignment.pdf

in-pct-2001-966-kol-granted-claims.pdf

in-pct-2001-966-kol-granted-correspondence.pdf

in-pct-2001-966-kol-granted-description (complete).pdf

in-pct-2001-966-kol-granted-drawings.pdf

in-pct-2001-966-kol-granted-examination report.pdf

in-pct-2001-966-kol-granted-form 1.pdf

in-pct-2001-966-kol-granted-form 18.pdf

in-pct-2001-966-kol-granted-form 2.pdf

in-pct-2001-966-kol-granted-form 3.pdf

in-pct-2001-966-kol-granted-form 5.pdf

in-pct-2001-966-kol-granted-form 6.pdf

in-pct-2001-966-kol-granted-pa.pdf

in-pct-2001-966-kol-granted-priority document.pdf

in-pct-2001-966-kol-granted-reply to examination report.pdf

in-pct-2001-966-kol-granted-specification.pdf


Patent Number 226508
Indian Patent Application Number IN/PCT/2001/966/KOL
PG Journal Number 51/2008
Publication Date 19-Dec-2008
Grant Date 17-Dec-2008
Date of Filing 18-Sep-2001
Name of Patentee SANDVIK INTELLECTUAL PROPERTY AB
Applicant Address A SWEDISH COMPANY, S-811 81, SANDVIKEN, SWEDEN
Inventors:
# Inventor's Name Inventor's Address
1 SUNDBERG, MATS LILJANSTORPSVÄ 57, S-722 46 VÄSTERAS
PCT International Classification Number C22C 29/18
PCT International Application Number PCT/SE00/00871
PCT International Filing date 2000-05-04
PCT Conventions:
# PCT Application Number Date of Convention Priority Country
1 9901827-7 1999-05-20 Sweden