| Title of Invention | SUB-MICRON LIGHTWAVE DEVICES FORMED ON AN SOI OPTICAL PLATFORM |
|---|---|
| Abstract | A set of planar, two-dimensional optical devices (242,244) is able to be created in a sub-micron surface layer of an SOI structure, or within a sub-micron thick combination of an SOI surface layer and an overlying polysilicon layer. Conventional masking/etching techniques may be used to form a variety of passive and optical devices in this SOI platform. Various regions of the devices may be doped to form the active device (180) structures. Additionally, the polysilicon layer may be separately patterned to provide a region of effective mode index change (250) for a propagating optical signal. |
| Full Text |
|---|
3111-chenp-2005 abstract duplicate.pdf
3111-chenp-2005 claims duplicate.pdf
3111-chenp-2005 correspondence-others.pdf
3111-chenp-2005 correspondence-po.pdf
3111-chenp-2005 description(complete) duplicate.pdf
3111-chenp-2005 description(complete).pdf
| Patent Number | 229446 | ||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Indian Patent Application Number | 3111/CHENP/2005 | ||||||||||||||||||||||||
| PG Journal Number | 12/2009 | ||||||||||||||||||||||||
| Publication Date | 20-Mar-2009 | ||||||||||||||||||||||||
| Grant Date | 17-Feb-2009 | ||||||||||||||||||||||||
| Date of Filing | 23-Nov-2005 | ||||||||||||||||||||||||
| Name of Patentee | SIOPTICAL, INC. | ||||||||||||||||||||||||
| Applicant Address | 7540 Windsor Drive, Lower Level, Allentown, Pennsylvania 18195, | ||||||||||||||||||||||||
Inventors:
|
|||||||||||||||||||||||||
| PCT International Classification Number | G02B 6/12 | ||||||||||||||||||||||||
| PCT International Application Number | PCT/US2004/012505 | ||||||||||||||||||||||||
| PCT International Filing date | 2004-04-23 | ||||||||||||||||||||||||
PCT Conventions:
|
|||||||||||||||||||||||||